Itinerant ferromagnetism in a spin-fermion model for diluted spin systems
Sourav Chakraborty, Sandip Halder, and Kalpataru Pradhan
Phys. Rev. B 108, 165110 (2023) - Published 9 October, 2023
We investigate itinerant ferromagnetism using a diluted spin-fermion model, derived from a repulsive Hubbard model, where itinerant fermions are coupled antiferromagnetically to spin auxiliary fields in a three-dimensional simple cubic lattice. We assign a positive finite value () to the Hubbard on-site potential () at a fraction of sites to model magnetic impurities and set for rest of the sites, which corresponds to the nonmagnetic sites. In this inhomogeneous Hubbard-model representation for randomly distributed magnetic impurities, which is an appropriate model to study diluted spin systems like diluted magnetic semiconductors, itinerant carriers are confined to the impurity band and play a key role in determining the kinetic energy of the system and, consequently, the carrier-spin polarization. We focus, in particular, on understanding the spin-dependent transport properties of itinerant fermions in the impurity band by taking positional disorder of the auxiliary fields into account. Our semiclassical Monte Carlo calculations show that the ferromagnetic transition temperature of the carrier spins indeed shows an optimization behavior with the carrier density, similar to experimental observation in diluted magnetic semiconductors. We calculate the transport properties in detail to establish a one-to-one correspondence between the magnetic and transport properties of the carriers. In addition, the spin-polarized resistivities and density of states show that the system turns out to be a half-metallic ferromagnet. Overall, our results obtained beyond the perturbative regime are significant for understanding the ferromagnetism in diluted magnetic semiconductors.
