The perovskite stannates ; Ba, Sr, Ca) are promising for oxide electronics, but control of -type doping has proved challenging. Using first-principles hybrid density functional calculations, we investigate La dopants and explore the formation of compensating acceptor defects. We find that La on the site always behaves as a shallow donor, but incorporation of La on the Sn site can lead to self-compensation. At low La concentrations and in O-poor conditions, oxygen vacancies form in . -site cation vacancies are found to be dominant among the native compensating centers. Compared to , charge compensation is a larger problem for the wider-band-gap stannates, and , a trend we can explain based on conduction-band alignments. The formation of compensating acceptor defects can be inhibited by choosing oxygen-poor (cation-rich) growth or annealing conditions, thus providing a pathway for improved -type doping.