Radiation-induced defect evolution in metallic alloys is often interpreted in terms of thermally activated defect diffusion, cascade quenching, and defect recombination. However, athermal structural relaxation can also influence defect evolution, particularly in chemically complex alloys. In this work, we investigate defect evolution in face-centered cubic (fcc) Ni, Ni–Cr, and Ni–Fe alloys using atomistic simulations based on the creation-relaxation algorithm (CRA), in which Frenkel pairs are iteratively introduced into an initially pristine lattice followed by structural relaxation. This approach isolates a nondiffusive, athermal limit by suppressing long-range thermal migration and explicit displacement-cascade effects. By analyzing point defects, defect clusters, athermal recombination probabilities, elastic properties, and dislocation structures, we show that alloying produces modest changes in the total residual defect inventory, despite pronounced differences in bulk elastic properties. Instead, the stronger alloying effects appear in defect morphology, interstitial-cluster statistics, local recombination behavior, and Burgers-vector-resolved dislocation character. Higher Fe concentrations promote fewer but larger interstitial clusters and enhance local athermal recombination with interstitial clusters, whereas pure Ni and Ni–Cr show a higher frequency of smaller clusters. These results indicate that, within the athermal CRA framework, local chemical and elastic environments influence the pathways of defect relaxation and clustering, while their effect on the total surviving defect population remains modest compared with that observed under irradiation conditions where thermally activated processes are active.

Understanding how microscopic structural dynamics relate to macroscopic mechanical response during yielding remains a central challenge in soft-matter physics. Here, we introduce rheo-echo x-ray photon correlation spectroscopy (Rheo-Echo-XPCS) with nonlinear acquisition synchronized to oscillatory shear, enabling direct measurement of irreversible nanoscale dynamics under controlled strain amplitude. Applying this approach to a carbon black colloidal fractal gel, we resolve time-periodic echoes in the vorticity-direction intensity autocorrelation function, whose decay encodes cycle-to-cycle nonaffine structural rearrangements spanning the linear viscoelastic regime, nonlinear deformation, and the yielding regime beyond ${\gamma }_y$. We find: (i) ballisticlike decorrelation with $\tau \propto q^{-1}$ at all strain amplitudes, where the decorrelation rate $v_{\tau }=1/\langle q\tau \rangle$ scales linearly with the loss tangent $tan\delta =G^{\prime \prime }/G^{\prime }$, establishing $tan\delta$ as a macroscopic measure of the rate of irreversible structural decorrelation; (ii) a continuous evolution of the relaxation function from compressed exponential ($\alpha \simeq 1.5$) at low strain—consistent with three-dimensional dipolar strain fields in the intact network—to stretched exponential ($\alpha \simeq 0.5$) at high strain, interpreted as a dimensional reduction from $d_f=3$ to $d_f=1$ as stress transmission shifts from bulk to quasi-one-dimensional filamentary backbones during network fragmentation.

Thin film ${\mathrm{BaTiO}}_3$ has one of the highest known Pockels coefficients ($>1200$ pm/V), making it an attractive material for use in electro-optic devices. It is advantageous to integrate ${\mathrm{BaTiO}}_3$ onto silicon to enable complementary metal-oxide-semiconductor (CMOS) compatible processing. However, synthesis of high-quality ${\mathrm{BaTiO}}_3$ directly on silicon remains a challenge. Here, we synthesize ${\mathrm{BaTiO}}_3$ using hybrid metal-organic molecular beam epitaxy (hMBE) and demonstrate its transfer onto silicon using thermocompression bonding and chemical lift off. Hybrid metal-organic MBE enables self-regulated synthesis of highly stoichiometric thin films at high growth rates ($>100$ nm/hr). Our transfer method results in millimeter-scale areas of atomically flat, crack-free ${\mathrm{BaTiO}}_3$ making it a potentially scalable method. Finally, we demonstrate the robustness of our transferred thin films to fabrication processes required to make devices through characterization of lithographically patterned and etch-transferred submicron features.

The anhydrous divalent $3d$-metal dirhenate quantum materials, $\mathit{M}{\left(\mathrm{Re}{\mathrm{O}}_4\right)}_2$,were synthesized using solid-state methods for $\mathit{M}=\mathrm{Mn}$ through Zn. Previously unreported $\mathrm{Mg}{\left(\mathrm{Re}{\mathrm{O}}_4\right)}_2$ is also described. Their layered crystal structures, which feature an in-plane triangular lattice of ${\mathit{M}}^{2+}$, were refined using single-crystal x-ray diffraction, and their optical absorption and several other physical properties were characterized. Their magnetism and heat capacity reveal long-range magnetic order at low temperatures in many of the $\mathit{M}{\left(\mathrm{Re}{\mathrm{O}}_4\right)}_2$ phases. Notably, many of these ordered states are sensitive to applied magnetic fields and can be readily suppressed by relatively small fields, consistent with complex magnetic interactions in a layered triangular framework, and appear worthy of further study.

In recent years, magnetically frustrated triangular and honeycomb lattice cobaltates have seen extensive study in the pursuit of a quantum spin liquid (QSL) state in a real material. In this work, we describe the hydroflux synthesis of ${\mathrm{K}}_2{\mathrm{Co}}_2{\left({\mathrm{TeO}}_3\right)}_3·2.5{\text{H}}_2\text{O}$ (KCoTOH), a novel zemannite-type antiferromagnet (AFM) possessing elements of both triangular dimer and honeycomb structural motifs. Bulk magnetometry and specific heat data support the onset of long-range AFM order below $T_{\text{N}}=7.6\left(1\right)$ K, with neutron diffraction and muon spin relaxation ($\mu \mathrm{SR}$) measurements placing the majority of the ordered moment within the $\mathit{ac}$ plane. We resolve three unique oscillation frequencies from the zero-field $\mu \mathrm{SR}$ spectra, additionally suggesting a remarkably low level of structural disorder in as-grown KCoTOH crystals. Whereas interactions between dimerized chains of ${\mathrm{Co}}^{2+}$ cations are typically observed to be negligible or ferromagnetic in nature, the largely planar, effective honeycomb ordering motif observed in KCoTOH is instead stabilized by net antiferromagnetic interactions through bridging tellurite groups. This work highlights the potential of hydroflux synthesis methods in the stabilization of magnetic materials possessing novel frustrated lattice geometries.

Over the past decades, two-dimensional crystals have attracted considerable interest as promising materials for electronic and optoelectronic applications. Among them, graphene analogs composed of heavy atoms occupy a particularly distinctive niche due to their enhanced spin-orbit interaction. Here, we present an epitaxial heterointerface formed by $\beta$-bismuthene on ${\mathrm{Sb}}_2{\mathrm{Te}}_3$, a well-known three-dimensional topological insulator. Using scanning tunneling microscopy, we systematically investigated the effects of Bi coverage and substrate temperature on nucleation processes, island morphology, and atomic structure. In addition, substrate-induced defects were identified throughout the bismuthene lattice.

Efficient electrical spin injection into GaAs(110) semiconductor structures requires ferromagnetic electrodes with perpendicular magnetization, as electron spins oriented normal to (110)-oriented quantum wells exhibit exceptionally long relaxation times. While MgO/CoFeB heterostructures provide highly spin-polarized tunneling currents and interfacial perpendicular magnetic anisotropy (PMA) on GaAs(001), implementing such spin injectors on GaAs(110) has remained largely unexplored. This is because the reduced symmetry of the (110) surface is expected to hinder MgO(001) growth, whereas introducing thick amorphous oxide layers to decouple symmetry is known to severely degrade spin injection efficiency and increase junction resistance. Here we address this materials challenge by identifying the minimal interfacial conditions under which PMA emerges on GaAs(110). We find that retaining an ultrathin residual oxide correlates with the appearance of PMA after annealing at $300{}^{\circ }\mathrm{C}$, whereas PMA is absent when the oxide is removed or when the thermal budget is nonoptimal. Structural analysis indicates that the MgO layer exhibits local crystalline ordering, although its precise orientation cannot be uniquely determined from the present data. These results demonstrate that PMA on GaAs(110) is stabilized only within a narrow interfacial and thermal tolerance window.

The magnetic anisotropy (MA) of Fe-based ferromagnetic thin films has been extensively studied for device applications. The examined material is a new Fe-based ferromagnetic thin film, bcc $\mathrm{F}{\mathrm{e}}_{1-x}\mathrm{A}{\mathrm{s}}_x$ (Fe–As) with in-plane MA (IMA) grown on a GaAs (111)B substrate. The magnetic properties of the Fe–As thin film have been investigated by X-ray magnetic circular dichroism (XMCD) and magnetic circular dichroism in hard X-ray photoemission spectroscopy (MCD-HAXPES) to elucidate the role of As ions in the IMA. The XMCD spectra at the Fe $L_{2,3}$ edge and MCD-HAXPES spectra of the Fe $2p$ core level exhibit ferromagnetic and metallic features similar to those of Fe metal. The XMCD at the As $L_{2,3}$ edge demonstrates that the As ions contribute to the anisotropic ferromagnetism of bcc Fe–As through hybridization between the Fe $3d$ and As $4p$ orbitals. Estimates of the magnetic moments of Fe using the XMCD sum rules reveal that the orbital magnetic moment is isotropic and the magnetic dipole term is anisotropic. In comparison with the undoped Fe film, the anisotropy of the magnetic dipole term can be attributed to the anisotropic $p–d$ hybridization induced by epitaxial strain, contributing to the enhancement of the IMA in bcc Fe–As.

In order to predict the long-term effects of irradiation on the material properties of tungsten, a continuum approach to simulating the interactions of dislocation loops, which arise from radiation damage, is proposed. Continuum models of the displacement, strain, and stress fields produced by dislocation loops exhibit unphysical singularities near the defect core, but are thought to accurately capture atomistic displacements in the far field. A linear elastic model of nanoscale dislocation loops in tungsten is developed, and the model is verified using atomistic simulations to ensure that the model is informed by lower-length scale phenomena such that the physics of the problem is correctly captured. We discuss the model and its advantages, and show that predictions produced by atomistic simulations do indeed agree well with the far-field behavior of the continuum model when dislocation loops are far from material boundaries. In particular, we robustly demonstrate that the decay rate of atomistic results and continuum results coincide with one another, and show that the results converge as the size of the atomistic simulations approach the far-field limit.

Charge orders in the kagome metals $A{\mathrm{V}}_3{\mathrm{Sb}}_5$ sit at the center of a rich phase diagram that also includes superconductivity, nematicity, and signatures of time-reversal-symmetry breaking. Yet even the basic question of which charge-ordering wavevectors are intrinsic, and which are selected by dimensionality and lattice coupling, remains unsettled. Importantly, the microscopic origin of different charge orders and, in particular, the relationship between the robust bulk $2\times 2$ charge order and the controversial $4\times 1$ modulation, which is primarily resolved by surface probes, remains unresolved. Here, we use first-principles calculations to study the role of interlayer coupling in ${\mathrm{CsV}}_3{\mathrm{Sb}}_5$ by tuning the interlayer separation from the monolayer limit to the bulk limit. In the monolayer $A{\mathrm{V}}_3{\mathrm{Sb}}_5$ ($A$ = Rb, Cs), the phonon spectrum exhibits no instability at the M point; instead, the dominant lattice instability occurs at $\text{q}=(1/4,0,0)$, consistent with a $4\times 1$ modulation. As interlayer coupling increases in ${\mathrm{CsV}}_3{\mathrm{Sb}}_5$, an M-point phonon progressively softens and becomes unstable already near $c\approx 12.24\AA$, evolving into the strong $2\times 2$ instability characteristic of the bulk. These results identify interlayer coupling as a control parameter at a fixed stoichiometry that links competing $4\times 1$ and $2\times 2$ tendencies, providing a unified framework for understanding why multiple charge-order wavevectors coexist and compete in kagome metals.

The family of topological semimetals $Ln{\mathrm{Sb}}_x{\mathrm{Te}}_{2-x-\delta }$ allows for the study of the interplay between electronic, magnetic, and structural properties by adjusting chemical pressure through the choice of lanthanide $\left(Ln\right)$ and band filling through Te doping. Previous reports indicated that the choice of $Ln$ may affect the magnetic ordering of spins and that the Sb/Te composition may affect the structural order in the square net. Here, we focus on the structural evolution of ${\mathrm{PrSb}}_x{\mathrm{Te}}_{2-x-\delta }$, with emphasis on the evolving structural modulation. Single-crystal diffraction reveals charge density wave (CDW) modulations that evolve with band filling. In an intermediate band-filling regime, selected-area electron diffraction shows that the magnitude of the single CDW wave vector varies approximately linearly with band filling. By contrast, at high band filling the system stabilizes three fixed, commensurate CDW wave vectors. We report two new modulated structure solutions of the family and compare the structural range of Pr against other $Ln$ in $Ln{\mathrm{Sb}}_x{\mathrm{Te}}_{2-x-\delta }$. Lastly, we find that in the single-q CDW regime, compounds with larger lanthanide ionic radii tend to reach shorter-period commensurate supercells, whereas smaller-$Ln$ members stabilize longer-period commensurate structures.

Ferrimagnetic ${\mathrm{Mn}}_4\mathrm{N}$ has recently emerged as a promising rare-earth-free platform for spintronic devices, owing to its low magnetization, high domain wall mobility, and strong anomalous Hall response. However, achieving thin films with robust perpendicular magnetic anisotropy (PMA) and spin-orbit torque (SOT) functionality via scalable deposition methods remains a key challenge. Here, we systematically investigate the growth of ${\mathrm{Mn}}_4\mathrm{N}$ thin films by reactive magnetron sputtering and establish the conditions required to obtain high-quality films with properties suitable for SOT applications. We show that epitaxial, single-crystalline ${\mathrm{Mn}}_4\mathrm{N}$ with strong PMA can be achieved on MgO(100), while films grown on ${\mathrm{SrTiO}}_3\left(100\right)$ remain textured. The optimized films exhibit square-like hysteresis loops with high remanence, large and tunable coercivity, and a large anomalous Hall effect signal. By combining structural, magnetic, and magnetotransport measurements with density functional theory calculations, we identify epitaxial strain as an important tuning parameter for magnetic anisotropy, while also demonstrating that it is not the sole contributor. In particular, our results highlight the additional role of interfacial effects in stabilizing PMA. Finally, we demonstrate efficient current-induced magnetization switching in ${\mathrm{Mn}}_4\mathrm{N}/\mathrm{Pt}$ bilayers, confirming efficient interfacial spin transparency. These results establish sputtered ${\mathrm{Mn}}_4\mathrm{N}$ as a viable and versatile material platform for energy-efficient spin-orbitronic devices.

We present a first-principles study of the vibrational spectra, i.e., vibrational density of states (VDOS) and infrared (IR) and Raman spectra, of amorphous tantala $\left(a\text{−}{\mathrm{Ta}}_2{\mathrm{O}}_5\right)$. Three model structures of up to 336 atoms in size have been generated by means of classical and ab initio molecular dynamics and subsequently used for a series of ab initio calculations of the vibrational modes and the relevant Raman and IR coupling tensors. For the assessment of size-dependent effects on the calculated vibrational spectra, we employed a machine-learned potential that enabled the calculation of the VDOS with ab initio accuracy for models containing up to a few thousand atoms. Raman and IR coupling tensors have been analyzed in a local reference frame, which provides direct insight into correlations with local structural parameters like the Ta–O–Ta angles and O–Ta bond lengths. Fair agreement is recorded with available experimental dielectric functions and Raman spectra for both the largest model structure and the fully ab initio generated model, in contrast with a third model, the Raman spectrum of which may appear to represent a structure approaching the onset of crystallization. In this study, we confirm that the vibrational modes above $\sim 550{\mathrm{cm}}^{-1}$ consist mainly of Ta–O stretching motion of O atoms; meanwhile, Ta motion gives a major contribution to the VDOS only below $\sim 200{\mathrm{cm}}^{-1}$. The vibrational modes underlying the main Raman peak at $\sim 670{\mathrm{cm}}^{-1}$ are related to Ta–O bond stretching motions, and a major contribution to the peak appears to come from twofold-coordinated O atoms, whereas the Raman weight of threefold-coordinated O atoms is maximized in the range $\sim 500–550{\mathrm{cm}}^{-1}$. Moreover, an analysis of the twofold-coordinated O contribution to the VDOS—resolved into rocking, bending, and stretching components—shows that, beyond $\sim 550{\mathrm{cm}}^{-1}$, the rocking and bending contributions vanish, leaving stretching as the dominant mode. Above $400{\mathrm{cm}}^{-1}$, the contribution of threefold-coordinated O atoms to the VDOS is essentially given by an in-plane Ta–O stretching motion which exhibits maxima around $450–500{\mathrm{cm}}^{-1}$, while oxygen out-of-plane motion is relevant mostly around $300{\mathrm{cm}}^{-1}$. Finally, by means of further local projectional analysis, we infer that vibrational modes with frequencies above $550{\mathrm{cm}}^{-1}$ feature mostly asymmetric and symmetric stretching modes of ${\mathrm{TaO}}_n$ $(n=5,6,7)$ polyhedra. The latter decomposition allows us to explain the origin of the experimental Raman band above $\sim 780{\mathrm{cm}}^{-1}$.

Magnetic materials that combine strong spin-orbit coupling with ferromagnetism enable interconversion between charge and spin currents as well as stabilization of exotic spin textures, properties that are critical for advancing next-generation spintronic technologies. The metallic delafossite ${\mathrm{PdCoO}}_2$ is a highly conductive, nonmagnetic oxide that resides near a magnetic instability, making it a unique and promising monolithic platform for spin phenomena. Here, we investigate how helium implantation drives ${\mathrm{PdCoO}}_2$ into a magnetic state. Through depth-resolved low-energy muon spin relaxation (LE-μSR) measurements, ion implantation simulations, and first-principles calculations, the defects responsible for the emergent magnetism are identified. While oxygen Frenkel pairs, palladium Frenkel pairs, and interstitial helium contribute weakly, cobalt Frenkel pairs play the dominant role in generating magnetism. In addition, postimplantation annealing reveals distinct thermal windows for defect recombination, confirming the elemental specificity of cation-related defects. These findings establish defect engineering via ion implantation as a powerful route to controllably induce magnetism in ${\mathrm{PdCoO}}_2$. The combination of strong spin-orbit coupling, selectively tunable magnetism, and ultrahigh conductivity positions helium-implanted ${\mathrm{PdCoO}}_2$ as a unique platform for monolithic spintronic device integration, with implications for low-power magnetic memory and unconventional logic applications.

With the rapid development of integrated electro-optic and nonlinear optical devices based on lithium niobate (${\mathrm{LiNbO}}_3$, LN), thermal management is becoming a critical area of focus. However, experimental measurement of thermal transport in stoichiometric ${\mathrm{LiNbO}}_3$ (sLN) remains scarce, and the intrinsic microscopic mechanisms remain to be established. Here, we combine the laser pump-probe technique of frequency-domain thermoreflectance (FDTR) with state-of-the-art machine-learned atomistic simulations to comprehensively investigate thermal transport in sLN. The measured and simulated room-temperature thermal conductivity ($\kappa$) values of sLN agree well, which are orders of magnitude lower than those of many classic and emerging semiconductors such as silicon. Furthermore, the temperature-dependent $\kappa$ exhibits $T^{-\alpha }$ scaling with $\alpha$ near unity, suggesting that thermal transport is dominated by intrinsic phonon-phonon scattering. By comparing sLN with cubic boron arsenide (cBAs) which serves as an ultrahigh-$\kappa$ benchmark, we reveal that harmonic properties are not responsible for the low $\kappa$ of sLN, which feature phonon heat capacity and group velocities that are either higher than or comparable with those in cBAs. Instead, the low $\kappa$ originates from substantially stronger anharmonicity and larger scattering phase space. These two factors collectively suppress phonon lifetimes by 1–2 orders of magnitude, leading to a maximum phonon mean free path of approximately 140 nm. As a result, notable size effects emerge in thin-film sLN below 1 µm, with $\kappa$ dropping to half the bulk value at 10 nm. Altogether, our findings establish a fundamental understanding of thermal transport in sLN and provide atomistic insights for thermal management in advanced lithium niobate technologies.

Lithium niobate (${\mathrm{LiNbO}}_3$) is a key anisotropic material for midinfrared photonics, nonlinear optics, and acousto-optic applications, where accurate dielectric function (DF) models are required for optical simulations under arbitrary crystallographic orientations. In this work, an anisotropic DF model for commercial X-, ${\text{Y-128}}^{\circ }$, and Z-cut ${\mathrm{LiNbO}}_3$ substrates is developed in the infrared (IR) spectral range using a factorized transverse optical and longitudinal optical (TO-LO) formalism. The model is obtained through spectroscopic ellipsometry (SE) supported by polarized Raman spectroscopy and IR reflectance measurements. These complementary techniques enable the identification and cross-validation of phonon modes associated with the in-plane $E\left(x\right)$ and out-of-plane $A_1\left(z\right)$ components of the dielectric tensor (DT). A single parametrized DT consistently reproduces the optical response of all analyzed crystal cuts through appropriate Euler-angle rotations, including different azimuthal configurations that exhibit distinct birefringent responses. The proposed approach provides a Kramers-Kronig consistent description of the dielectric response through a physically constrained parametrization, reducing parameter correlations during optical modeling. The resulting DF is presented in analytical form over the $230-1200{\mathrm{cm}}^{-1}$ spectral range and is directly applicable to integrated photonics, acousto-optic, and nonlinear optical device simulations in the IR.

Structural design has been increasingly exploited as an effective strategy for broadband microwave absorption, enabling tailored electromagnetic responses without modifying intrinsic material compositions. In this work, a structure-mediated magnetic composite absorber is proposed by introducing a cruciform unit cell with a four-lobed central aperture, which allows parameter modulation of the frequency-dependent effective permittivity and permeability through geometry-induced electric and magnetic field localization, thereby achieving broadband impedance matching and efficient dielectric-magnetic loss synergy. Both simulations and experiments demonstrate that the proposed absorber, with a total thickness of 4 mm, exhibits an effective absorption bandwidth of 13.0 GHz (4.5–17.5 GHz, reflection loss <$-10\mathrm{dB}$), covering the C, X, and Ku bands. In addition, the design exhibits polarization insensitivity and stable performance under a moderate oblique incidence of up to ${30}^{\circ }$. This work establishes a single-layer, composition-preserving strategy in which geometry-induced electric and magnetic responses are jointly engineered, extending broadband magnetic-composite absorber design beyond conventional material reformulation and multilayer stacking.

Quasi-2D ${\mathrm{Bi}}_2{\mathrm{O}}_2\mathrm{Se}$ is part of an intensive materials research effort aimed at finding new semiconductors that outperform silicon-based electronics in terms of speed and power consumption. This material exhibits exceptionally high carrier mobility at low temperatures but mediocre mobility at 300 K. Its high mobility is generally associated with its high permittivity (${\varepsilon }_r\approx 500$), which is also associated with metallicity persisting down to very low carrier concentrations. This material exhibits a counterintuitive increase in carrier mobility as the concentration increases. The connection between both low carrier concentration and mobility in Se-rich conditions, and both high carrier concentration and mobility in Se-poor conditions suggests that the increase is related to native defects. We demonstrate that these defects can alter the effective mass of charge carriers. Specifically, substitutional ${\mathrm{Se}}_{\mathrm{Bi}}$ defects, which appear under Se-rich conditions, destroy the ${\mathrm{Bi}}_2{\mathrm{O}}_2$ channel and compromise charge transport properties. These defects increase the effective mass of charge carriers transforming the original semiconductor into a semimetal and introducing holes into charge transport. Additionally, we show that single crystals are generally inhomogeneous, particularly those grown under Se-rich conditions. Unlike Se-poor conditions, Se-rich conditions induce a higher concentration of dislocations and extraneous phases. These findings suggest that the perfection of the ${\mathrm{Bi}}_2{\mathrm{O}}_2$ channel is crucial for mobility, particularly at room temperature.

We report a systematic investigation of the structural, magnetic, and magnetoelectric properties of single-crystalline ${\mathrm{MnPS}}_3$, a van der Waals honeycomb antiferromagnetic insulator. While isostructural to ${\mathrm{MnPSe}}_3, {\mathrm{MnPS}}_3$ exhibits distinct magnetic behavior characterized by a Néel temperature of $T_{\mathrm{N}}\sim 78$ K and a magnetic point group 2′/$m$ with moments oriented predominantly along the $c$ axis. Thermodynamic analysis via specific heat reveals a significant magnetic entropy release extending well above $T_{\mathrm{N}}$, indicative of robust two-dimensional short-range correlations and a two-/three-dimensional magnetic crossover. Crucially, we observe a magnetic-field-induced electric polarization $\mathrm{\Delta }{P}_z$ when a magnetic field is applied perpendicular to the $z$ direction. The $\mathrm{\Delta }{P}_z$($H$) response exhibits a pronounced and unconventional hysteretic behavior, which we attribute to the interplay between the symmetry-allowed linear ME effect and weak interlayer vdW interactions that govern magnetic domain dynamics. These findings provide fundamental insights into the symmetry-driven magnetoelectric coupling in low-dimensional systems and position ${\mathrm{MnPS}}_3$ as a versatile platform for tunable spintronic and quantum functional devices.

The cubic zincblende polymorph of InGaN is a very promising candidate for optical applications. Its absence of spontaneous polarization fields in the (001) orientation and lower fundamental band gap compared to its wurtzite counterpart makes it especially interesting for efficient light-emitting diodes (LEDs) and micro-LEDs. Therefore, understanding the optical properties and band structure of this material plays a key role in the development of possible future applications. For this, the current study presents the optical properties in the form of the dielectric function of thin film ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}\mathrm{N}$ for entire composition range $(0\le x\le 1)$. The investigated spectral regions range from the near-infrared (0.5 eV) to the vacuum ultraviolet (8.8 eV). We focus on the spectral ranges above 4 eV to study the redshift of the higher energy transition (${\mathrm{E}}_1$ at the $L$-point of the band structure and ${\mathrm{E}}_2$ at the $X$-point) as the In composition changes from GaN to InN. The characteristic energy of these transitions at critical points in the band structure are determined by a critical point model based on the third derivative of the dielectric function. Bowing fits of the ${\mathrm{E}}_1$ and ${\mathrm{E}}_2$ transitions yield bowing parameters of $b_1=1.01\mathrm{eV}$ and $b_2=0.50\mathrm{eV}$. Furthermore, we determined the dielectric limit as ${\varepsilon }_{\infty }={\varepsilon }_1(E\to 0)$, yielding a bowing parameter of $b_{\infty }=1.58$.