Thin film ${\mathrm{BaTiO}}_3$ has one of the highest known Pockels coefficients ($>1200$ pm/V), making it an attractive material for use in electro-optic devices. It is advantageous to integrate ${\mathrm{BaTiO}}_3$ onto silicon to enable complementary metal-oxide-semiconductor (CMOS) compatible processing. However, synthesis of high-quality ${\mathrm{BaTiO}}_3$ directly on silicon remains a challenge. Here, we synthesize ${\mathrm{BaTiO}}_3$ using hybrid metal-organic molecular beam epitaxy (hMBE) and demonstrate its transfer onto silicon using thermocompression bonding and chemical lift off. Hybrid metal-organic MBE enables self-regulated synthesis of highly stoichiometric thin films at high growth rates ($>100$ nm/hr). Our transfer method results in millimeter-scale areas of atomically flat, crack-free ${\mathrm{BaTiO}}_3$ making it a potentially scalable method. Finally, we demonstrate the robustness of our transferred thin films to fabrication processes required to make devices through characterization of lithographically patterned and etch-transferred submicron features.

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• Ferroelectricity
• Thermal expansion
• Thin films
• Atomic force microscopy
• Molecular beam epitaxy