Little is known about the role of weak interlayer coupling in the second harmonic generation (SHG) effects of two-dimensional van der Waals (vdW) systems. In this paper, taking homobilayer and heterobilayer as typical examples, we have systemically investigated their SHG susceptibilities as a function of interlayer hopping strength () using first-principles calculations. For the of both and , although the increase of can increase the intensities of interlayer optical transitions (IOT), the increased band repulsion around the Γ point can eventually decrease their values; the larger the , the smaller the . For the spectra of in the low photon-energy region, opposite to the , their peak values are very sensitive to the variable , due to the strong -dependent IOT dominating in the band edge; the larger the , the larger the . For the of in the high photon-energy region, comparing to the , their peak values will decrease in a much more noticeable way as the increases, due to the larger reduction of band-nesting effect. Our study not only can successfully explain the puzzling experimental observations for the different SHG responses in different bilayer transition metal dichalcogenides under variable , but also may provide a general understanding for designing controllable the SHG effects in the vdW systems.