First-principles calculations using the hybrid density functional are carried out to study the defect levels and photoluminescence of bismuth doped in perovskites (, Gd, La) and (, Ga, In). Bismuth dopants are confirmed to be predominantly occupying the site, i.e., (, Gd, La). The variation of the electron trap depth is shown mainly due to the shift of the conduction band, while the hole trap level shows the correlation with the shortest bond length in hosts. Based on the defect level diagram from the first-principles calculation, the transition types of excitation and emission are predicted. Among the systems considered, the lowest excited level that produces the photoluminescence is the levels of the configuration of , except for -doped , which is the valence band to charge transfer state. The photoluminescence involving states shows similar Stokes shift in the series, and the excitation and emission energies exhibit almost linear correlation with the band gaps of hosts of a slope . Furthermore, our calculations show that there is no tendency of forming excessive pairs in all the five :, while the coupling in provides a “bridge” for energy migration from an excited isolated ion to the pairs that are naturally present due to random distribution, leading to the 495-nm emission being observed uniquely in bismuth-doped among the series of systems considered. The results lay the basis for manipulating the trap levels and excitation and emission wavelengths in -doped perovskite oxides.