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High exchange-bias blocking temperature in an ultrathin amorphous antiferromagnet system

Jiajun Guo, Xiaonan Zhao, Zhijian Lu, Peng Shi, Yufeng Tian, Yanxue Chen, Shishen Yan, and Lihui Bai*

Michael Harder

  • School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 27 Shandanan Road, Jinan 250100, China

  • Department of Physics, British Columbia Institute of Technology, 3700 Willingdon Avenue, Burnaby, British Columbia, Canada, V5G 3H2

  • *lhbai@sdu.edu.cn

Phys. Rev. B 104, L100401 – Published 1 September, 2021

DOI: https://doi.org/10.1103/PhysRevB.104.L100401

Abstract

We experimentally observed an ultrahigh blocking temperature, above 600 K, in an exchange-biased Fe/FeO bilayer after field annealing at 773 K. This is far above the 198 K Néel temperature of bulk FeO. By comparing with an Fe/FeO/Fe trilayer and studying the Fe thickness dependence, we find that the magnetic proximity effect, due to coupling between the Fe layer and the ultrathin amorphous FeO layer, is responsible for the high blocking temperature. The realization of high-temperature exchange bias using an ultrathin antiferromagnet paves the way to further miniaturize magnetic devices for high-information-density applications.

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