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Exciton Formation in Two-Dimensional Semiconductors

K. Mourzidis ¹, V. Jindal ¹, M. Glazov ², A. Balocchi ¹, C. Robert¹, D. Lagarde¹, P. Renucci¹, L. Lombez ¹, T. Taniguchi ³ et al.

K. Watanabe ⁴, T. Amand ¹, S. Francoeur ⁵, and X. Marie ^1,6,*

¹Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, France
²Ioffe Institute, 26 Polytechnicheskaya, 194021 Saint Petersburg, Russia
³International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-00044, Japan
⁴Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-00044, Japan
⁵RQMP and Département de génie physique, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
⁶Institut Universitaire de France, 75231 Paris, France

^*Contact author: marie@insa-toulouse.fr

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Articles Citing

Exciton Formation in Two-Dimensional Semiconductors

Electric field and strain tunable optoelectronic properties of X2Te3/WSe2 (X = Bi, Sb) vertical heterostructures for high-efficiency photovoltaics

Intersubband electric dipole spin resonance in transition metal dichalcogenide heterobilayers

Cavity-Reconstructed Exciton Relaxation and Charge Transfer in WS2/MoS2 Junctions

Topological and chiral phonons in two-dimensional transitional metal monocarbide monolayers

Direct Observation of Ultrafast Defect-Bound and Free Exciton Dynamics in Defect-Engineered WS2 Monolayers

Formation of excitonic complexes in monolayer MoSe2 probed by excitation correlation spectroscopy

Exciton formation dynamics in (Ga,In)As quantum wells

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