Recent Articles

Nonlinear charge transport properties in chiral tellurium

Kazuki Nakazawa, Terufumi Yamaguchi, and Ai Yamakage

Phys. Rev. Materials 8, L091601 (2024) - Published 30 September, 2024

Schottky-Ohmic transition and tunable ferromagnetism in van der Waals monolayer Cr2Ge2Te6 heterostructure

Wei Tan, Zi-Wen Zhang, Xiaoying Zhou, Zhuo-Liang Yu, Yu-Qing Zhao, Shaolong Jiang, and Yee Sin Ang

Phys. Rev. Materials 8, 094414 (2024) - Published 27 September, 2024

Dramatic elastic response at the critical end point in UTe2

Michal Vališka, Tetiana Haidamak, Andrej Cabala, Jiří Pospíšil, Gaël Bastien, Vladimír Sechovský, Jan Prokleška, Tatsuya Yanagisawa, Petr Opletal, Hironori Sakai, Yoshinori Haga, Atsuhiko Miyata, Denis Gorbunov, and Sergei Zherlitsyn

Phys. Rev. Materials 8, 094415 (2024) - Published 27 September, 2024

Unconventional superconducting pairing in a B20 multifold Weyl fermion semimetal

Sougata Mardanya, Mehdi Kargarian, Rahul Verma, Tay-Rong Chang, Sugata Chowdhury, Hsin Lin, Arun Bansil, Amit Agarwal, and Bahadur Singh

Phys. Rev. Materials 8, L091801 (2024) - Published 27 September, 2024

Random forest prediction of crystal structure from electron diffraction patterns incorporating multiple scattering

Samuel P. Gleason, Alexander Rakowski, Stephanie M. Ribet, Steven E. Zeltmann, Benjamin H. Savitzky, Matthew Henderson, Jim Ciston, and Colin Ophus

Phys. Rev. Materials 8, 093802 (2024) - Published 26 September, 2024

Diffraction is the most common method for solving unknown crystal structures, but nanoscale heterogeneity poses substantial challenges. Here we train random forest models to predict the crystal system, space group, and lattice parameters from one or more unknown 2D electron diffraction patterns. We apply this architecture to a 4D-STEM scan of over 100 gold nanoparticles, accurately predicting the crystal structure and lattice constants. Our ML architecture significantly accelerates the analysis of electron diffraction patterns, particularly in the case of unknown crystal structures at speeds amenable to live analysis. This work also releases ~360 million simulated 2D dynamical electron diffraction patterns from 36,000 materials, each with 100 unique crystal orientations and 100 specimen thicknesses.

Engineering of magnetic anisotropy in MnGeSe3 monolayer via hydrogenation and multiferroic heterostructures

Yang Zhou, Qilong Sun, Lin Ju, Ruishan Tan, and Nicholas Kioussis

Phys. Rev. Materials 8, 094413 (2024) - Published 26 September, 2024

Effect of (001) and (111) epitaxial strain on Pnma perovskite oxides

Amartyajyoti Saha and Turan Birol

Phys. Rev. Materials 8, 094412 (2024) - Published 25 September, 2024

Iterative composition optimization in Fe2VA1–based thin-film thermoelectrics using single-target sputtering

A. Riss, E. Lasisch, S. Podbelsek, K. Schäfer, M. Parzer, F. Garmroudi, C. Eisenmenger-Sittner, T. Mori, and E. Bauer

Phys. Rev. Materials 8, 095402 (2024) - Published 25 September, 2024

Material-efficient preparation and thermoelectric properties of metallic NixAu1−x films with large power factor

A. Riss, F. Garmroudi, M. Parzer, C. Eisenmenger-Sittner, A. Pustogow, T. Mori, and E. Bauer

Phys. Rev. Materials 8, 095403 (2024) - Published 25 September, 2024

Magnetic compensation in Mn4−xCuxN films on SrTiO3(001) with noncollinear magnetic structures

Aoi Hatate, Tomohiro Yasuda, Kenta Amemiya, and Takashi Suemasu

Phys. Rev. Materials 8, L091403 (2024) - Published 25 September, 2024

Mn4N films are promising materials for ultrafast magnetization control via spin currents. Previous studies have shown that adding magnetic elements such as Ni or Co to these films induces magnetization compensation (MC) at room temperature. The authors now demonstrate that ferrimagnetic Mn4N films can also achieve MC at room temperature with a small addition of Cu, marking the first instance of MC being induced by doping with a non-magnetic element. X-ray magnetic circular dichroism and magnetization measurements further reveal that the magnetic structure of Cu-doped Mn4N films differs from that of their Ni- or Co-doped counterparts.

Tuning the interlayer coupling in La0.7Sr0.3Mn0.95Ru0.05O3/LaNiO3 multilayers with perpendicular magnetic anisotropy

Jörg Schöpf, Valentina Piva, Paul H. M. van Loosdrecht, Ionela Lindfors-Vrejoiu, Padraic Shafer, Divine P. Kumah, Xuanyi Zhang, Lide Yao, and Sebastiaan van Dijken

Phys. Rev. Materials 8, 094410 (2024) - Published 24 September, 2024

Topological Hall effect induced by chiral fluctuations in ErMn6Sn6

Kyle Fruhling, Alenna Streeter, Sougata Mardanya, Xiaoping Wang, Priya Baral, Oksana Zaharko, Igor I. Mazin, Sugata Chowdhury, William D. Ratcliff, and Fazel Tafti

Phys. Rev. Materials 8, 094411 (2024) - Published 24 September, 2024

The topological Hall effect can emerge in a material either statically due to the formation of skyrmions or dynamically due to thermal fluctuations. ErMn6Sn6 undergoes a field-induced ferrimagnetic to antiferromagnetic phase transition. At the boundary of this phase transition there is an intermediate phase which is predicted to provide the right environment for the emergence of a significant dynamic topological Hall effect. Therefore, ErMn6Sn6 provides a testbed to investigate the universality of thermal fluctuations as a mechanism of the topological Hall effect.

Electric field direction dependence of the electrocaloric effect in BaTiO3

Lan-Tien Hsu, Frank Wendler, and Anna Grünebohm

Phys. Rev. Materials 8, 094408 (2024) - Published 20 September, 2024

Incommensurate magnetic ordering and a possible structural transition in EuIn4

D. H. Ryan, Sergey L. Bud'ko, and Paul C. Canfield

Phys. Rev. Materials 8, 094409 (2024) - Published 20 September, 2024

Charge-ordering and spin-dimerization transition in CuIr2S4: Lattice dynamics confirms octamer correlations

V. Gnezdilov, A. Glamazda, V. Tsurkan, and P. Lemmens

Phys. Rev. Materials 8, 095002 (2024) - Published 20 September, 2024

Impact of grain boundary energy anisotropy on grain growth

S. Kiana Naghibzadeh, Zipeng Xu, David Kinderlehrer, Robert Suter, Kaushik Dayal, and Gregory S. Rohrer

Phys. Rev. Materials 8, 093403 (2024) - Published 19 September, 2024

Recent observations of microstructure evolution during annealing revealed that grain growth not only reduces grain boundary area but also dissipates additional energy through a decrease in average grain boundary energy—a feature that isotropic simulations with uniform energy assumption fail to predict. The authors use a threshold dynamics model incorporating anisotropic grain boundary energies to simulate the observed grain growth of polycrystalline Ni. The model predicts an increase in the relative area of low-energy twin boundaries and a decrease in average boundary energy. This study highlights that realistic simulation of grain growth in polycrystals requires anisotropic grain boundary energy implementation.

Fluorite-type materials in the monolayer limit

Shota Ono and Ravinder Pawar

Phys. Rev. Materials 8, 094002 (2024) - Published 19 September, 2024

Magnetization dependent anisotropic topological properties in EuCuP

Jian Yuan, Xianbiao Shi, Hong Du, Wei Xia, Xia Wang, Jinguang Cheng, Baotian Wang, Ruidan Zhong, Shihao Zhang, and Yanfeng Guo

Phys. Rev. Materials 8, 094202 (2024) - Published 19 September, 2024

Subjugating extensive magnetostructural temperature window and giant magnetocaloric effect in B-doped (MnNiSi)0.67(Fe2Ge)0.33 hexagonal system

J. Sridhar Mohanty, Saheli Samanta, and Kalyan Mandal

Phys. Rev. Materials 8, 094407 (2024) - Published 18 September, 2024

Intrinsic origins of broad luminescence in melt-grown ZnGa2O4 single crystals

Ymir K. Frodason, Augustinas Galeckas, Vegard S. Olsen, Philip M. Weiser, Zbigniew Galazka, Chris G. Van de Walle, and Lasse Vines

Phys. Rev. Materials 8, 094604 (2024) - Published 18 September, 2024

The authors present a detailed theoretical study of the optical behavior of native defects in zinc gallium oxide based on configuration coordinate diagrams derived from hybrid functional calculations. The resulting predicted luminescence lines are compared with low-temperature photoluminescence spectra measured on zinc gallium oxide single crystals grown from the melt. Based on this comparison, self-trapped holes, Zn antisites, Zn vacancies, and their complexes with Ga antisites are put forward as potential origins of the observed luminescence.

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