We measured the complex Young modulus of (BT), (BST), and (BCTZ) during heating and cooling runs at various O deficiencies [which dope electrons rendering the samples semiconducting/conducting ferroelectrics (FEs)] and aging times. The elastic energy loss has peaks due to the jumps of isolated O vacancies ('s) and reorientations of pairs of 's in the paraelectric phase, from which the respective rates and activation energies are measured. These rates control the mechanisms of domain clamping, pinning, fatigue, and anything related to the mobility. In the FE phase, the drop of the losses due to the domain wall (DW) motion upon introduction of 's monitors the degree of pinning. In addition, large shifts of are observed at the same value of upon varying the permanence time in the FE state, up to 21 K in BST, while no aging effect is found in BCTZ. The phenomenology is explained by considering that is depressed mainly by the mobile electrons doped by 's. Each isolated dopes two electrons as itinerant ions, but when it forms a stable linear –– pair, the two electrons of the are subtracted from the mobile ones, halving doping. The rise of during the initial aging is then explained in terms of the progressive aggregation of the 's. Prolonging aging for years leads to a decrease of , explained assuming that the most stable position of is at DWs, whose geometry is incompatible with the pairs. Then after enough time, the initially aggregated within the domains dissociate to decorate the walls, increasing doping and lowering The absence of such effects in BCTZ is due to larger activation energy for pair reorientation and pair binding energy. Then at room temperature, practically all 's are paired and static over a timescale of hundreds of years, explaining the superior resistance of BCTZ to fatigue.