The realization of spin field-effect transistors requires robust spin-orbit splitting and coherent spin precession in the presence of ferroelectric polarization, which can be observed in two-dimensional noncentrosymmetric systems. To control the spin-orbit coupling (SOC) parameters, we adopted strain engineering. Within the framework of the density functional theory, we investigated the electronic structure, spontaneous electric polarization, and spin texture of (, Mo; , Br, I) monolayer under uniaxial strain from % to 5%. We obtained tunable spin splitting in the conduction band minimum of all the monolayers. Among them, monolayer shows considerable SOC strength reaching up to 2.16 Å, allowing the device to function at room temperature. We also found that the spontaneous electric polarization is substantially influenced by the applied strain, which is increased from 156.2 pC/m to 255.3 pC/m. Additionally, we highlight the emergence of a reversible persistent spin helix (PSH) across all the compounds, maintained across strained variants. For practical applications, we confirm the fully reversed PSH under external electric V/nm. The highly tunable spontaneous electric polarization and the SOC strength as well as the emergence and reversibility of the PSH state in (, Mo; , Br, I) monolayer underscore the potential for the application to the spin diffusion channel in spin-field effect transistors.