Recent Articles

Unified model of the Hall effect from insulator to overdoped compounds in cuprate superconductors

Júlia C. Anjos, Hércules S. Santana, and E. V. L. de Mello

Phys. Rev. B 111, 115109 (2025) - Published 5 March, 2025

Phases of matrix product states with symmetric quantum circuits and symmetric measurements with feedforward

David Gunn, Georgios Styliaris, Tristan Kraft, and Barbara Kraus

Phys. Rev. B 111, 115110 (2025) - Published 5 March, 2025

Bulk and surface electron scattering in disordered Bi2Te3 probed by quasiparticle interference

V. Nagorkin, S. Schimmel, P. Gebauer, A. Isaeva, D. Baumann, A. Koitzsch, B. Büchner, and C. Hess

Phys. Rev. B 111, 115111 (2025) - Published 5 March, 2025

Noninvertible duality and symmetry topological order of one-dimensional lattice models with spatially modulated symmetry

Donghae Seo, Gil Young Cho, and Robert-Jan Slager

Phys. Rev. B 111, 115112 (2025) - Published 5 March, 2025

Magnetic-field dependence of spin-phonon relaxation and dephasing due to g-factor fluctuations from first principles

Joshua Quinton, Mayada Fadel, Junqing Xu, Adela Habib, Mani Chandra, Yuan Ping, and Ravishankar Sundararaman

Phys. Rev. B 111, 115113 (2025) - Published 5 March, 2025

Two types of colossal magnetoresistance with distinct mechanisms in Eu5In2As6

Sudhaman Balguri, Mira B. Mahendru, Enrique O. González Delgado, Kyle Fruhling, Xiaohan Yao, David E. Graf, Jose A. Rodriguez-Rivera, Adam A. Aczel, Thomas J. Hicken, Hubertus Luetkens, Michael J. Graf, Andreas Rydh, Jonathan Gaudet, and Fazel Tafti

Phys. Rev. B 111, 115114 (2025) - Published 5 March, 2025

This work investigates colossal magnetoresistance (CMR) in the Zintl semiconductor Eu5In2As6. The authors identify two distinct types of CMR occurring at different temperature regimes. The high-temperature CMR is attributed to the formation and percolation of magnetic polarons, while the low-temperature CMR is proposed to arise from charge ordering or other forms of electron localization. These results demonstrate the importance of interactions between the charge, spin, and lattice degrees of freedom in driving CMR in europium-based Zintl materials.

Charge ordering and spontaneous topological Hall effect in bilayer skyrmion crystals

Andrew Hardy, Anjishnu Bose, Tanmay Grover, and Arun Paramekanti

Phys. Rev. B 111, 115115 (2025) - Published 5 March, 2025

Linear photogalvanic effect induced by quantum metric in PT-symmetric tilted nodal-line semimetals

Yi-Bei Huang, Meng-Rou Huang, Shi-Han Zheng, Hou-Jian Duan, Ming-Xun Deng, and Rui-Qiang Wang

Phys. Rev. B 111, 115116 (2025) - Published 5 March, 2025

Zero-bias photocurrent and valley current in a circular graphene quantum dot with noncollinear leads

Min Dai and Feng Zhai

Phys. Rev. B 111, 115402 (2025) - Published 5 March, 2025

Two-qubit gate with macroscopic singlet-triplet qubits in synthetic spin-one chains in InAsP quantum dot nanowires

Hassan Allami, Daniel Miravet, Marek Korkusinski, and Pawel Hawrylak

Phys. Rev. B 111, 115403 (2025) - Published 5 March, 2025

Replica topological order in quantum mixed states and quantum error correction

Zhuan Li (李專) and Roger S. K. Mong (蒙紹璣)

Phys. Rev. B 111, 125106 (2025) - Published 5 March, 2025

Universality of extreme-broadening mechanisms in some near-edge x-ray spectra

Terrence Jach, John Vinson, Michael Woodcox, Adrian Jonas, Katja Frenzel, Rainer Unterumsberger, and Burkhard Beckhoff

Phys. Rev. B 111, 125107 (2025) - Published 5 March, 2025

From explicit to spontaneous charge order and the fate of the antiferromagnetic quantum Hall state

Mohsen Hafez-Torbati

Phys. Rev. B 111, 125108 (2025) - Published 5 March, 2025

Origin of spectral topology in non-Hermitian Aubry-André-Harper models

Xiaoming Cai

Phys. Rev. B 111, 125109 (2025) - Published 5 March, 2025

Revealing spinons by proximity effect

Antonio Maria Tagliente, Carlos Mejuto-Zaera, and Michele Fabrizio

Phys. Rev. B 111, 125110 (2025) - Published 5 March, 2025

DFT+DMFT study of correlated electronic structure in the monolayer-trilayer phase of La3Ni2O7

Zhenfeng Ouyang, Jia-Ming Wang, Rong-Qiang He, and Zhong-Yi Lu

Phys. Rev. B 111, 125111 (2025) - Published 5 March, 2025

Large anomalous Hall effect induced by skew scattering in the hexagonal ferromagnet PrCrGe3

Zhongjie Yu, Hongwei You, Xiaohua Luo, Yuyang Han, Rui Zhong, Qing Luo, Huiyang Yang, Hengheng Wu, Changcai Chen, Chunsheng Fang, Weijun Ren, and Shengcan Ma

Phys. Rev. B 111, 125112 (2025) - Published 5 March, 2025

Statistical analysis of spurious dot formation in silicon metal-oxide-semiconductor single electron transistors

Kuan-Chu Chen, Clement Godfrin, George Simion, Imri Fattal, Julien Jussot, Stefan Kubicek, Sofie Beyne, Bart Raes, Arne Loenders, Kuo-Hsing Kao, Danny Wan, and Kristiaan De Greve

Phys. Rev. B 111, 125301 (2025) - Published 5 March, 2025

The presence of spurious quantum dots in silicon-based spin qubit devices is a challenge for quantum system scalability. The authors use here electrostatic triangulation to statistically analyse their spatial distribution in silicon metal-oxide-semiconductor (SiMOS) single-electron transistors (SETs), fabricated on an industrial 300-mm process. By combining experimental mapping with simulations, they reveal that spurious dots primarily arise from strain and gate bias effects. This insight informs device design strategies to mitigate spurious dots while preserving tunability, advancing scalable silicon-based quantum technologies.

Thermoelectric fluctuations of interfering Majorana bound states

Sergey Smirnov

Phys. Rev. B 111, 125402 (2025) - Published 5 March, 2025

Non-Hermitian acoustic Möbius insulator

Qing Wang, Zhonghao Fu, Liping Ye, Hailong He, Weiyin Deng, Jiuyang Lu, Manzhu Ke, and Zhengyou Liu

Phys. Rev. B 111, L100101 (2025) - Published 5 March, 2025

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