We use hybrid density functional calculations to assess -type doping in monoclinic alloys. We focus on silicon, the most promising donor dopant, and study the structural properties, formation energies, and charge-state transition levels of its various configurations. We also explore the impact of carbon and hydrogen, which are common impurities in metal-organic chemical vapor deposition (MOCVD). In is an effective shallow donor, but in acts as a center with a () transition level in the band gap. Interstitial hydrogen acts as a shallow donor in but behaves as a compensating acceptor in -type . Interpolation indicates that Si is an effective donor in up to 70% Al, but it can be compensated by hydrogen already at 1% Al. We also assess the diffusivity of hydrogen and study complex formation. complexes have relatively low binding energies. Substitutional carbon on a cation site acts as a shallow donor in , but can be stable in a negative charge state in when . Substitutional carbon on an oxygen site () always acts as an acceptor in -type , but will incorporate only under relatively oxygen-poor conditions. complexes can actually incorporate more easily, explaining observations of carbon-related compensation in grown by MOCVD. We also investigate complexes, finding they have high binding energies and act as compensating acceptors when ; otherwise the hydrogen just passivates the unintentional carbon donors. C-H complex formation explains why MOCVD-grown can exhibit record-low free-carrier concentrations, in spite of the unavoidable incorporation of carbon. Our study highlights that, while Si is in principle a suitable shallow donor in alloys up to high Al compositions, control of unintentional impurities is essential to avoid compensation.