Recent Articles

Pressure-tunable photonic band gaps in an entropic colloidal crystal

Rose K. Cersonsky, Julia Dshemuchadse, James Antonaglia, Greg van Anders, and Sharon C. Glotzer

Phys. Rev. Materials 2, 125201 (2018) - Published 6 December, 2018

Robust high-fidelity DFT study of the lithium-graphite phase diagram

Vikram Pande and Venkatasubramanian Viswanathan

Phys. Rev. Materials 2, 125401 (2018) - Published 6 December, 2018

Nontrivial scaling exponents of dislocation avalanches in microplasticity

G. Sparks and R. Maaß

Phys. Rev. Materials 2, 120601(R) (2018) - Published 5 December, 2018

Intermittency during plastic flow is one example of avalanches in critically evolving systems. Such fluctuations are typically assessed statistically with scale-free distributions. Theory and simulations have studied this behavior in detail, generally arguing for two prominent models (mean-field approach or a jamming-unjamming picture) that are characterized via distinctly different avalanche scaling exponents. In this paper, the authors show experimentally how scaling exponents for the same single crystalline metal can admit a variety of scaling exponents that encompass both models. Depending on both intrinsic and extrinsic factors, their experiments reveal how the scaling exponents are nontrivial and therefore not universal.

Lifetime-shortened acoustic phonons and static order at the Brillouin zone boundary in the organic-inorganic perovskite CH3NH3PbCl3

M. Songvilay, M. Bari, Z.-G. Ye, Guangyong Xu, P. M. Gehring, W. D. Ratcliff, K. Schmalzl, F. Bourdarot, B. Roessli, and C. Stock

Phys. Rev. Materials 2, 123601 (2018) - Published 5 December, 2018

Quasi-free-standing single-layer WS2 achieved by intercalation

Sanjoy K. Mahatha, Maciej Dendzik, Charlotte E. Sanders, Matteo Michiardi, Marco Bianchi, Jill A. Miwa, and Philip Hofmann

Phys. Rev. Materials 2, 124001 (2018) - Published 5 December, 2018

Epitaxial growth of single-layer transition metal dichalcogenides can give rise to high-quality, large area materials, and it is even possible to grow them in just a single orientation—the key to exploit properties such as the valley degree of freedom. However, the strong interaction with the substrate that favors a single orientation can also destroy the interesting properties of the material due to hybridization effects. Here this issue is resolved by first growing a single layer of WS2 on Ag(111) and then decoupling it from the surface via the intercalation of Bi atoms.

First-principles calculations of second-order nonlinear optical coefficients in the static limit and Pockels coefficients in III-N and II−IV−N2 compounds

Sai Lyu and Walter R. L. Lambrecht

Phys. Rev. Materials 2, 124602 (2018) - Published 5 December, 2018

Machine-learning-accelerated high-throughput materials screening: Discovery of novel quaternary Heusler compounds

Kyoungdoc Kim, Logan Ward, Jiangang He, Amar Krishna, Ankit Agrawal, and C. Wolverton

Phys. Rev. Materials 2, 123801 (2018) - Published 4 December, 2018

Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111)

Lars Winterfeld, Christian Koppka, Daniel Abou-Ras, Peter Kleinschmidt, Oliver Supplie, Thomas Hannappel, and Erich Runge

Phys. Rev. Materials 2, 124601 (2018) - Published 3 December, 2018

Based on density functional theory calculations, the authors develop a general model for nucleation of III-V semiconductors on vicinal nonpolar (111)-oriented substrates. This model predicts, in particular, that the atomic structure of the step edges at the substrate surface is decisive for the formation and suppression of detrimental rotational twin defects. These predictions are in full agreement with the experimental analysis done on a series of samples with the technologically important material combination of GaP grown on As-modified Si(111). The authors thus derive a complete picture of the formation and suppression of rotational twins relevant for low-defect III-V-on-Si integration.

Giant electrostatic modification of magnetism via electrolyte-gate-induced cluster percolation in La1−xSrxCoO3−δ

Jeff Walter, T. Charlton, H. Ambaye, M. R. Fitzsimmons, Peter P. Orth, R. M. Fernandes, and Chris Leighton

Phys. Rev. Materials 2, 111406(R) (2018) - Published 30 November, 2018

Accurate band alignment at the amorphous Al2O3/p-Ge(100) interface determined by hard x-ray photoelectron spectroscopy and density functional theory

Nicholas F. Quackenbush, Eric Cockayne, James M. Ablett, D. Peter Siddons, Joseph C. Woicik, and Abdul K. Rumaiz

Phys. Rev. Materials 2, 114605 (2018) - Published 30 November, 2018

Nematicity and superconductivity in orthorhombic superconductor Na0.35(C3N2H10)0.426Fe2Se2

Xiao Fan, Jun Deng, Hongxiang Chen, Linlin Zhao, Ruijin Sun, Shifeng Jin, and Xiaolong Chen

Phys. Rev. Materials 2, 114802 (2018) - Published 30 November, 2018

Roughening and strain-field evolution at a grain boundary in α−Al2O3

Sung Bo Lee, Seung-Yong Lee, Seung Jo Yoo, Yoonkoo Kim, Jin-Gyu Kim, Miyoung Kim, and Heung Nam Han

Phys. Rev. Materials 2, 113405 (2018) - Published 29 November, 2018

Mobility of two-dimensional materials from first principles in an accurate and automated framework

Thibault Sohier, Davide Campi, Nicola Marzari, and Marco Gibertini

Phys. Rev. Materials 2, 114010 (2018) - Published 29 November, 2018

Knowing the intrinsic mobility of 2D materials is key to assess their performance in novel electronic devices. First-principles simulations can predict phonon-limited mobilities, but being systemic and accurate is a challenging task. Here, the authors develop fully automated workflows to identify all relevant electron-phonon scattering processes that limit mobility and compute their probability using a recent development in density-functional perturbation theory for gated 2D materials. Then, an exact numerical solution to the Boltzmann transport equation allows to account for the full energy- and momentum-dependency of the scattering processes, leading to the “turnkey” calculation of mobilities on demand.

Electronic structure of monolayer antimonene nanoribbons under out-of-plane and transverse bias

Edo van Veen, Jin Yu, Mikhail I. Katsnelson, Rafael Roldán, and Shengjun Yuan

Phys. Rev. Materials 2, 114011 (2018) - Published 29 November, 2018

Role of interstitial hydrogen in SrCoO2.5 antiferromagnetic insulator

Li Liang, Shuang Qiao, Shiqiao Du, Shunhong Zhang, Jian Wu, and Zheng Liu

Phys. Rev. Materials 2, 114409 (2018) - Published 29 November, 2018

Structure and dynamics of water confined in nanoporous carbon

Yuzi He, Ken-ichi Nomura, Rajiv K. Kalia, Aiichiro Nakano, and Priya Vashishta

Phys. Rev. Materials 2, 115605 (2018) - Published 29 November, 2018

Origin of glass forming ability of Cu-Zr alloys: A link between compositional variation and stability of liquid and glass

Shraddha Ganorkar, Sooheyong Lee, Yun-Hee Lee, Takehiko Ishikawa, and Geun Woo Lee

Phys. Rev. Materials 2, 115606 (2018) - Published 29 November, 2018

Origin of deep localization in GaAs1−xBix and its consequences for alloy properties

K. Alberi, B. Fluegel, D. A. Beaton, M. Steger, S. A. Crooker, and A. Mascarenhas

Phys. Rev. Materials 2, 114603 (2018) - Published 28 November, 2018

Structural dynamics in hybrid halide perovskites: Bulk Rashba splitting, spin texture, and carrier localization

Chao Zheng, Shidong Yu, and Oleg Rubel

Phys. Rev. Materials 2, 114604 (2018) - Published 28 November, 2018

Nuclear and magnetic structures of the frustrated quantum antiferromagnet barlowite, Cu4(OH)6FBr

K. Tustain, G. J. Nilsen, C. Ritter, I. da Silva, and L. Clark

Phys. Rev. Materials 2, 111405(R) (2018) - Published 27 November, 2018

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