We model laser-induced transient-current waveforms in radiation coplanar-grid detectors. Poisson’s equation is solved by the finite-element method and currents induced by a photogenerated charge are obtained using the Shockley-Ramo theorem. The spectral response on a radiation flux is modeled by Monte Carlo simulations. We show a $10\times$ improved spectral resolution of the coplanar-grid detector using differential signal sensing. We model the current waveform dependence on the doping, depletion width, diffusion, and detector shielding, and their mutual dependence is discussed in terms of detector optimization. The numerical simulations are successfully compared to experimental data, and further model simplifications are proposed. The space charge below electrodes and a nonhomogeneous electric field on a coplanar-grid anode are found to be the dominant contributions to laser-induced transient-current waveforms.

We report a first-principles study of electronic structures, magnetic properties, and the tunneling-magnetoresistance (TMR) effect of a series of ferromagnetic nitride $M_4\mathrm{N}$ ($M=\mathrm{Fe}$, Co, Ni)-based magnetic tunnel junctions (MTJs). It is found that bulk ${\mathrm{Fe}}_4\mathrm{N}$ reveals a half-metal nature in terms of the ${\mathrm{\Delta }}_1$ state. A perpendicular magnetic anisotropy is observed in the periodic system ${\mathrm{Fe}}_4\mathrm{N}/\mathrm{MgO}$. In particular, the ultrahigh TMR ratio of over 24 000% is predicted in the ${\mathrm{Fe}}_4\mathrm{N}/\mathrm{MgO}/{\mathrm{Fe}}_4\mathrm{N}$ MTJ due to the interface resonance tunneling and relatively high transmission for states of other symmetry. Besides, the large TMR can be maintained with the change of atomic details at the interface, such as the order-disorder interface, the change of thickness of the MgO barrier, and different in-plane lattice constants of the MTJ. The physical origin of the TMR effect can be well understood by analyzing the band structure and transmission channel of bulk ${\mathrm{Fe}}_4\mathrm{N}$ as well as the transmission in momentum space of ${\mathrm{Fe}}_4\mathrm{N}/\mathrm{MgO}/{\mathrm{Fe}}_4\mathrm{N}$. Our results suggest that the ${\mathrm{Fe}}_4\mathrm{N}/\mathrm{MgO}/{\mathrm{Fe}}_4\mathrm{N}$ MTJ is a benefit for spintronic applications.

The coherent perfect absorber (CPA), a time-reversed counterpart to the laser emission, could cause all energy fed to the system to be absorbed. It can also be used as an absorptive interferometer, which could provide applications in controllable optical energy transfer. Here, in order to achieve a terahertz CPA, we propose a designed metasurface and experimentally demonstrate that it can serve as a polarization-insensitive CPA at a one-frequency channel under normal symmetric excitation, while a transverse-electric CPA at two-frequency channels around oblique 40° symmetric incidence. Such phenomena in this system can be attributed to Fano resonance consisting of interacting one bright and one dark mode under normal incidence and an additional operative dark mode under oblique symmetric excitation. The experimental results find good agreement with the fitted coupled-mode theory. Moreover, we show that the output amplitude can be effectively tuned from 0 to 1 only by varying the relative phase between the two input waves. The designed CPA could find potential application in effectively controlling absorption for terahertz imaging and terahertz switches.

We propose an on-chip optical-power delivery system for dielectric laser accelerators based on a fractal “tree-network” dielectric waveguide geometry. This system replaces experimentally demanding free-space manipulations of the driving laser beam with chip-integrated techniques based on precise nanofabrication, enabling access to orders-of-magnitude increases in the interaction length and total energy gain for these miniature accelerators. Based on computational modeling, in the relativistic regime, our laser delivery system is estimated to provide 21 keV of energy gain over an acceleration length of $192\mu \mathrm{m}$ with a single laser input, corresponding to a 108-MV/m acceleration gradient. The system may achieve 1 MeV of energy gain over a distance of less than 1 cm by sequentially illuminating 49 identical structures. These findings are verified by detailed numerical simulation and modeling of the subcomponents, and we provide a discussion of the main constraints, challenges, and relevant parameters with regard to on-chip laser coupling for dielectric laser accelerators.

Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element $LC$ resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of $\delta q=95\times {10}^{-6}e{\mathrm{\text{Hz}}}^{-1/2}$ when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.

Acoustically actuated bubbles are receiving growing interest in microfluidic applications, as they induce a streaming field that can be used for particle sorting and fluid mixing. An essential but often unspoken challenge in such applications is to maintain a constant bubble size to achieve reproducible conditions. We present an automatized system for the size control of a cylindrical bubble that is formed at a blind side pit of a polydimethylsiloxane microchannel. Using a pressure control system, we adapt the protrusion depth of the bubble into the microchannel to a precision of approximately $0.5\mu \mathrm{m}$ on a timescale of seconds. By comparing the streaming field generated by bubbles of width $80\mu \mathrm{m}$ with a protrusion depth between $-12$ and $60\mu \mathrm{m}$, we find that the mean velocity of the induced streaming fields varies by more than a factor of 4. We also find a qualitative change of the topology of the streaming field. Both observations confirm the importance of the bubble size control system in order to achieve reproducible and reliable bubble-driven streaming experiments.

Photoluminescence and magneto-optical measurements are performed on a line peaking at 3.354 eV (labeled as NBX) in electron-irradiated ZnO. Even though the energy position of the NBX line is close to that for bound excitons in ZnO, it has distinctively different magneto-optical properties. Photoelectron paramagnetic resonance measurements reveal a connection and a charge-transfer process involving NBX and Fe and Al centers. The experimental results are explained within a model which assumes that the NBX is a neutral donor bound exciton at a defect center located near a Fe impurity and an Auger-type charge-transfer process occurs between NBX and ${\mathrm{Fe}}^{3+}$. While the NBX dissociates, its hole is captured by an excited state of ${\mathrm{Fe}}^{3+}$ and the released energy is transferred to the NBX electron, which is excited to the conduction band and subsequently trapped by a substitutional ${\mathrm{Al}}_{\mathrm{Zn}}$ shallow donor.

We demonstrate optical readout of a single spin using cavity quantum electrodynamics. The spin is based on a single trapped electron in a quantum dot that has a poor branching ratio of 0.43. Selectively coupling one of the optical transitions of the quantum dot to the cavity mode results in a spin-dependent cavity reflectivity that enables spin readout by monitoring the reflected intensity of an incident optical field. Using this approach, we demonstrate spin-readout fidelity of 0.61. Achieving this fidelity using resonance fluorescence from a bare dot would require 43 times improvement in photon collection efficiency.

This paper is a contribution to the Physical Review Applied collection in memory of Mildred S. Dresselhaus.

High-performance materials rely on small reorganization energies to facilitate both charge separation and charge transport. Here, we perform density-functional-theory calculations to predict small reorganization energies of rectangular silicene nanoclusters with hydrogen-passivated edges denoted by H-SiNC. We observe that across all geometries, H-SiNCs feature large electron affinities and highly stabilized anionic states, indicating their potential as $n$-type materials. Our findings suggest that fine-tuning the size of H-SiNCs along the “zigzag” and “armchair” directions may permit the design of novel $n$-type electronic materials and spintronics devices that incorporate both high electron affinities and very low internal reorganization energies.

Microwave-assisted magnetization switching (MAS) is attracting attention as a method for reversing nanomagnets with a high magnetic anisotropy by using a small-amplitude magnetic field. We experimentally study MAS of a perpendicularly magnetized nanomagnet by applying a microwave magnetic field with a time-varying frequency. Because the microwave field frequency can follow the nonlinear decrease of the resonance frequency, larger magnetization excitation than that in a constant-frequency microwave field is induced, which enhances the MAS effect. The switching field decreases almost linearly as the start value of the time-varying microwave field frequency increases, and it becomes smaller than the minimum switching field in a constant-frequency microwave field. To obtain this enhancement of the MAS effect, the end value of the time-varying microwave field frequency needs to be almost the same as or lower than the critical frequency for MAS in a constant-frequency microwave field. In addition, the frequency change typically needs to take 1 ns or longer to make the rate of change slow enough for the magnetization to follow the frequency change. This switching behavior is qualitatively explained by the theory based on the macrospin model.

The effect of undesirable high-frequency free-layer switching in magnetic multilayer systems, referred to as back-hopping, is investigated by means of the spin-diffusion model. A possible origin of the back-hopping effect is found to be the destabilization of the pinned layer, which leads to the perpetual switching of both layers. While the presented mechanism is not claimed to be the only possible reason for back-hopping, we show that it is a fundamental effect that will occur in any spin-transfer-torque device when exceeding a critical current. The influence of different material parameters on the critical switching currents for the free and pinned layer is obtained by micromagnetic simulations. The spin-diffusion model enables an accurate description of the torque on both layers, depending on various material parameters. It is found that the choice of a free-layer material with low polarization $\beta$ and saturation magnetization $M_s$ and a pinned-layer material with high $\beta$ and $M_s$ leads to a low free-layer critical current and a high pinned-layer critical current and hence reduces the likelihood of back-hopping. While back-hopping has been observed in various types of devices, there are only a few experiments that exhibit this effect in perpendicularly magnetized systems. However, our simulations suggest that the described effect will also gain importance in perpendicular systems due to the loss of pinned-layer anisotropy for decreasing device sizes.

The rapid development of metasurfaces has enabled numerous intriguing applications with acoustically thin sheets. Here we report the theory and experimental realization of a nonresonant sound-absorbing strategy using metasurfaces by harnessing multiple internal reflections. We theoretically and numerically show that the higher-order diffraction of thin gradient-index metasurfaces is tied to multiple internal reflections inside the unit cells. Highly absorbing acoustic metasurfaces can be realized by enforcing multiple internal reflections together with a small amount of loss. A reflective gradient-index acoustic metasurface is designed based on the theory, and we further experimentally verify the performance using a three-dimensional printed prototype. Measurements show over 99% energy absorption at the peak frequency and a 95% energy absorption bandwidth of around 600 Hz. The proposed mechanism provides an alternative route for sound absorption without the necessity of high absorption of the individual unit cells.

Recently, we proposed a simultaneous quantum and classical communication (SQCC) protocol where random numbers for quantum key distribution and bits for classical communication are encoded on the same weak coherent pulse and decoded by the same coherent receiver. Such a scheme could be appealing in practice since a single coherent communication system can be used for multiple purposes. However, previous studies show that the SQCC protocol can tolerate only very small phase noise. This makes it incompatible with the coherent communication scheme using a true local oscillator (LO), which presents a relatively high phase noise due to the fact that the signal and the LO are generated from two independent lasers. We improve the phase noise tolerance of the SQCC scheme using a true LO by adopting a refined noise model where phase noises originating from different sources are treated differently: on the one hand, phase noise associated with the coherent receiver may be regarded as trusted noise since the detector can be calibrated locally and the photon statistics of the detected signals can be determined from the measurement results; on the other hand, phase noise due to the instability of fiber interferometers may be regarded as untrusted noise since its randomness (from the adversary’s point of view) is hard to justify. Simulation results show the tolerable phase noise in this refined noise model is significantly higher than that in the previous study, where all of the phase noises are assumed to be untrusted. We conduct an experiment to show that the required phase stability can be achieved in a coherent communication system using a true LO.

We present a detailed experimental study of a hydrodynamic filtration microchip and show how chip performance can be tuned and clogging avoided by adjusting the flow rates. We demonstrate concentration and separation of microspheres at throughputs as high as $29\mathrm{ml}/\min$ and with 96% pureness. Results of streakline visualizations show that the thickness of a tunable filtration layer dictates the cutoff size and that two different concentration mechanisms exist. Particles larger than pores are concentrated by low-velocity rolling over the filtration pillars, while particles smaller than pores are concentrated by lateral drift across the filtration layer. Results of microscopic particle image velocimetry and particle-tracking velocimetry show that the degree of lateral migration can be quantified by the slip velocity between the particle and the surrounding fluid. Finally, by utilizing differences in inertia and separation mode, we demonstrate size-based separation of particles in a mixture.

We investigate the pump efficiency of silicon-vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.

Localized waves, i.e., the wide class of limited-diffraction, limited-dispersion solutions to the wave equation are generally characterized by real wave numbers. We consider the role played by localized waves with generally complex “leaky” wave numbers. First, the impact of the imaginary part of the wave number (i.e., the leakage constant) on the diffractive (spatial broadening) features of monochromatic localized solutions (i.e., beams) is rigorously evaluated. Then general conditions are derived to show that only a restricted class of spectra (either real or complex) allows for generating a causal localized wave. It turns out that backward leaky waves fall into this category. On this ground, several criteria for the systematic design of wideband radiators, namely, periodic radial waveguides based on backward leaky waves, are established in the framework of leaky-wave theory. An effective design method is proposed to minimize the frequency dispersion of the proposed class of devices and the impact of the “leakage” on the dispersive (temporal broadening) features of polychromatic localized solutions (i.e., pulses) is accounted for. Numerical results corroborate the concept, clearly highlighting the advantages and limitations of the leaky-wave approach for the generation of localized pulses at millimeter-wave frequencies, where energy focusing is in high demand in modern applications.

One of the key issues in engineering oxide interfaces for electronic devices is achieving high electron mobility. ${\mathrm{SrTiO}}_3$-based interfaces with high electron mobility have gained a lot of interest due to the possibility of combining quantum phenomena with the many functionalities exhibited by ${\mathrm{SrTiO}}_3$. To date, the highest electron mobility ($140000{\mathrm{cm}}^2/\mathrm{V}\mathrm{s}$ at 2 K) is obtained by interfacing perovskite ${\mathrm{SrTiO}}_3$ with spinel $\gamma \text{−}{\mathrm{Al}}_2{\mathrm{O}}_3$. The origin of the high mobility, however, remains poorly understood. Here, we investigate the scattering mechanisms limiting the mobility in $\gamma \text{−}{\mathrm{Al}}_2{\mathrm{O}}_3/{\mathrm{SrTiO}}_3$ at temperatures between 2 and 300 K and over a wide range of sheet carrier densities. For $T>150\mathrm{K}$, we find that the mobility is limited by longitudinal optical phonon scattering. For large sheet carrier densities ($>8\times {10}^{13}{\mathrm{cm}}^{-2}$), the screened electron-phonon coupling leads to room-temperature mobilities up to $\mu \sim 12{\mathrm{cm}}^2/\mathrm{V}\mathrm{s}$. For $5\mathrm{K}<T<150\mathrm{K}$, the mobility scales as approximately $T^{-2}$, consistent with electron-electron scattering limiting the electron mobility. For $T<5\mathrm{K}$ and at an optimal sheet carrier density of approximately $4\times {10}^{14}{\mathrm{cm}}^{-2}$, the electron mobility is found to exceed $100000{\mathrm{cm}}^2/\mathrm{V}\mathrm{s}$. At sheet carrier densities less than the optimum, the electron mobility decreases rapidly, and the current flow becomes highly influenced by domain walls and defects in the near-interface region of ${\mathrm{SrTiO}}_3$. At carrier densities higher than the optimum, the ${\mathrm{SrTiO}}_3$ heterostructure gradually becomes bulk conducting, and the electron mobility decreases to approximately $20000{\mathrm{cm}}^2/\mathrm{V}\mathrm{s}$. We argue that the high electron mobility observed arises from a spatial separation of donors and electrons with oxygen-vacancy donors preferentially forming at the interface, whereas the itinerant electrons extend deeper into ${\mathrm{SrTiO}}_3$. Understanding the scattering mechanism in $\gamma \text{−}{\mathrm{Al}}_2{\mathrm{O}}_3/{\mathrm{SrTiO}}_3$ paves the way for creation of high-mobility nanoscale electronic devices.

Hydromechanical anisotropy of clay soils in response to deformation or deposition history is related to the micromechanics of platelike clay particles and their orientations. In this article, we examine the relationship between microstructure, deformation, and moisture content in kaolin clay using a technique based on neutron scattering. This technique allows for the direct characterization of microstructure within representative samples using traditional measures such as orientation density and soil fabric tensor. From this information, evidence for a simple relationship between components of the deviatoric strain tensor and the deviatoric fabric tensor emerge. This relationship may provide a physical basis for future anisotropic constitutive models based on the micromechanics of these materials.

Thermally generated spin signals are observed in a nondegenerate Si spin valve. The spin-dependent Seebeck effect is used for thermal spin-signal generation. A thermal gradient of about 200 mK at the interface of Fe and Si enables the generation of a spin voltage of $8\mu \mathrm{V}$ at room temperature. A simple expansion of the conventional spin-drift-diffusion model that takes into account the spin-dependent Seebeck effect shows that semiconductor materials are more promising for thermal spin-signal generation comparing than metallic materials, and thus enable efficient heat recycling in semiconductor spin devices.

Zinc oxide thin films are synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, and optical spectroscopy. Our results reveal that the structural, morphological, and optical properties are closely related to the stress of the sample provided that the texture of the film remains the same. The anomalous results are obtained once the texture is altered to a different orientation. We support this experimental observation by carrying out first-principles hybrid functional calculations for two different orientations of the sample and show that the effect of quantum confinement is much stronger for the (100) surface than the (001) surface of ZnO. Furthermore, our calculations provide a route to enhance the band gap of ZnO by more than 50% compared to the bulk band gap, opening up possibilities for wide-range industrial applications.