Recent Articles

Implementation of Shor’s algorithm with a single photon in 32 dimensions

Hao-Cheng Weng and Chih-Sung Chuu

Phys. Rev. Applied 22, 034003 (2024) - Published 3 September, 2024

Extension of Babinet’s relations to reflective metasurfaces: Application to the simultaneous control of wavefront and polarization

Takayoshi Fujikawa and Toshihiro Nakanishi

Phys. Rev. Applied 22, 034002 (2024) - Published 3 September, 2024

Nonlocal twist sequences in floppy kagome chains

Pegah Azizi and Stefano Gonella

Phys. Rev. Applied 22, 034001 (2024) - Published 3 September, 2024

Matrix analysis of high-density arrayed waveguides: Crosstalk suppression by bending

Panu Hildén and Andriy Shevchenko

Phys. Rev. Applied 22, 024077 (2024) - Published 30 August, 2024

Quantum transport signature of strain-induced scalar and pseudovector potentials in a crenelated h-BN/graphene heterostructure

Romaine Kerjouan, Michael Rosticher, Aurélie Pierret, Kenji Watanabe, Takashi Taniguchi, Sukhdeep Dhillon, Robson Ferreira, Daniel Dolfi, Mark Goerbig, Bernard Plaçais, and Juliette Mangeney

Phys. Rev. Applied 22, 024076 (2024) - Published 30 August, 2024

Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs

Maximilian W. Feil, Magdalena Weger, Hans Reisinger, Thomas Aichinger, André Kabakow, Dominic Waldhör, Andreas C. Jakowetz, Sven Prigann, Gregor Pobegen, Wolfgang Gustin, Michael Waltl, Michel Bockstedte, and Tibor Grasser

Phys. Rev. Applied 22, 024075 (2024) - Published 30 August, 2024

Silicon carbide MOSFETs are transforming power electronics by enabling higher switching frequencies and lower losses than their silicon-only counterparts. This study uses time-gated optical spectroscopy to investigate defect-assisted recombination in fully processed devices, specifically addressing their well-known hysteresis. The inquiry identifies a local vibrational mode with a very energy of 220 meV, indicating the presence of a carbon-cluster-like defect. This approach to characterizing interface states in MOSFETs reveals possibilities for enhancing device reliability and performance.

Lower switching-current density in Ta/(Pt/X)n/Pt/Co/Ta (X = Ta,Mn,Cu,V,Zr, Bi; n = 3, 4) multilayers based on a domain-wall-depinning model

Shuanghai Wang, Kun He, Yongkang Xu, Zhuoyi Li, Jin Wang, Caitao Li, Xingze Dai, Jun Du, Yong-Lei Wang, Ronghua Liu, Xianyang Lu, Yongbing Xu, and Liang He

Phys. Rev. Applied 22, L021002 (2024) - Published 29 August, 2024

Delving into the advancing realm of low-power, high-density magnetic memory, this research presents a Ta/(Pt/Ta)4/Pt/Co/Ta multilayered structure. Confronting challenges in conventional spin-orbit torque (SOT) magnetic random-access memory (MRAM), such as low spin Hall angles and elevated current densities, the authors achieve a reduction of 79% in critical-switching-current density, while enhancing torque efficiency and minimizing coercivity. Notably, a strong linear correlation among key parameters validates the domain-wall-depinning model, broadening its applicability to diverse metal dopants.

Multiaxis quantum noise spectroscopy robust to errors in state preparation and measurement

Muhammad Qasim Khan, Wenzheng Dong, Leigh M. Norris, and Lorenza Viola

Phys. Rev. Applied 22, 024074 (2024) - Published 29 August, 2024

Quantum noise spectroscopy (QNS) is a powerful tool to characterize temporally correlated environmental noise, for noise-tailored control in noisy intermediate-scale quantum processors. However, QNS protocols have been limited by their vulnerability to state-preparation-and-measurement (SPAM) errors, and their inability to simultaneously characterize dephasing and relaxation effects. This work overcomes both of these challenges. The authors present a single-qubit QNS protocol utilizing continuous off-axis control for robust estimation of all multiaxis noise spectra, and show that SPAM errors can significantly alter or mask important features of the underlying native noise.

Rearrangement of individual atoms in a 2000-site optical-tweezer array at cryogenic temperatures

Grégoire Pichard, Desiree Lim, Étienne Bloch, Julien Vaneecloo, Lilian Bourachot, Gert-Jan Both, Guillaume Mériaux, Sylvain Dutartre, Richard Hostein, Julien Paris, Bruno Ximenez, Adrien Signoles, Antoine Browaeys, Thierry Lahaye, and Davide Dreon

Phys. Rev. Applied 22, 024073 (2024) - Published 29 August, 2024

Arrays of single atoms trapped in optical tweezers have become a leading platform for quantum science and technology. A challenge at the frontier of the field is to scale up the number of atoms into the thousands. In addition, combining these arrays with a cryogenic environment would come with significant gains in lifetime and fidelity of quantum operations. This study successfully combines large-scale atomic arrays with a cryogenic environment, at a temperature of 6 K. The authors demonstrate the rearrangement of more than 800 atoms within a 2000-site array and discuss possible improvements of the setup, in a key step toward better, larger atom arrays for quantum technologies.

Spin-wave reservoir chips with short-term memory for high-speed estimation of external magnetic fields

Sho Nagase, Shoki Nezu, and Koji Sekiguchi

Phys. Rev. Applied 22, 024072 (2024) - Published 29 August, 2024

Harnessing spin waves for high-speed computing: In this work an innovative spin-wave reservoir chip, utilizing ferromagnetic permalloy thin films, demonstrates exceptional capabilities. By strategically manipulating spin-wave interference, the authors achieve a multi-input–multi-output reservoir capable of memory retention, nonlinearity enhancement, and accurate magnetic field estimation. This spintronic hardware paves the way for high-speed applications in reservoir computing and signal processing.

Microwave-to-optical quantum transduction utilizing the topological Faraday effect of topological-insulator heterostructures

Akihiko Sekine, Mari Ohfuchi, and Yoshiyasu Doi

Phys. Rev. Applied 22, 024071 (2024) - Published 29 August, 2024

Nonlocal inverse design of an ultrasonic lens for underwater manipulation of orbital angular momentum

Chuanxin Zhang, Fei Dai, Xue Jiang, and Dean Ta

Phys. Rev. Applied 22, 024070 (2024) - Published 28 August, 2024

Sequential-measurement thermometry with quantum many-body probes

Yaoling Yang, Victor Montenegro, and Abolfazl Bayat

Phys. Rev. Applied 22, 024069 (2024) - Published 27 August, 2024

Imaging symmetric and antisymmetric behavior of orbital-angular-momentum-entangled two-photon states

Zeferino Ibarra-Borja, Pablo Yepiz-Graciano, Nicolas Claro-Rodríguez, Alfred B. U’Ren, and Roberto Ramírez-Alarcón

Phys. Rev. Applied 22, 024068 (2024) - Published 27 August, 2024

Role of oxygen in laser-induced contamination at diamond-vacuum interfaces

Shreyas Parthasarathy, Maxime Joos, Lillian B. Hughes, Simon A. Meynell, Taylor A. Morrison, J.D. Risner-Jamtgaard, David M. Weld, Kunal Mukherjee, and Ania C. Bleszynski Jayich

Phys. Rev. Applied 22, 024067 (2024) - Published 26 August, 2024

Cubic magneto-optic Kerr effect in Ni(111) thin films with and without twinning

Maik Gaerner, Robin Silber, Tobias Peters, Jaroslav Hamrle, and Timo Kuschel

Phys. Rev. Applied 22, 024066 (2024) - Published 26 August, 2024

Electron-phonon scattering in two-dimensional Dirac-source transistors

Shuaishuai Yuan and Hong Guo

Phys. Rev. Applied 22, 024065 (2024) - Published 26 August, 2024

First-principles characterization of thermal conductivity in LaPO4-based alloys

Anees Pazhedath, Lorenzo Bastonero, Nicola Marzari, and Michele Simoncelli

Phys. Rev. Applied 22, 024064 (2024) - Published 26 August, 2024

Critical nonlinear aspects of hopping transport for reconfigurable logic in disordered dopant networks

Henri Tertilt, Jonas Mensing, Marlon Becker, Wilfred G. van der Wiel, Peter A. Bobbert, and Andreas Heuer

Phys. Rev. Applied 22, 024063 (2024) - Published 26 August, 2024

Mitigating errors in dc magnetometry via zero-noise extrapolation

John S. Van Dyke, Zackary White, and Gregory Quiroz

Phys. Rev. Applied 22, 024062 (2024) - Published 23 August, 2024

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