Lower switching-current density in <math xmlns="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mi>Ta</mi><mo>/</mo><mo stretchy="false">(</mo><mi>Pt</mi><mo>/</mo><mrow><mrow><mi mathvariant="normal">X</mi></mrow></mrow><mo stretchy="false">)</mo><mi>n</mi><mo>/</mo><mi>Pt</mi><mo>/</mo><mi>Co</mi><mo>/</mo><mi>Ta</mi></math> (<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mrow><mrow><mi mathvariant="normal">X</mi></mrow></mrow></math> = <math xmlns="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mi>Ta</mi><mo>,</mo><mspace width="0.2em"></mspace><mi>Mn</mi><mo>,</mo><mspace width="0.2em"></mspace><mi>Cu</mi><mo>,</mo><mspace width="0.2em"></mspace><mrow><mrow><mi mathvariant="normal">V</mi></mrow></mrow><mo>,</mo><mspace width="0.2em"></mspace><mi>Zr</mi></math>, <math xmlns="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mi>Bi</mi></math>; <i>n </i>= 3, 4) multilayers based on a domain-wall-depinning model

Shuanghai Wang; Kun He; Yongkang Xu; Zhuoyi Li; Jin Wang; Caitao Li; Xingze Dai; Jun Du; Yong-Lei Wang; Ronghua Liu; Xianyang Lu; Yongbing Xu; Liang He

doi:10.1103/PhysRevApplied.22.L021002

Letter

Lower switching-current density in $Ta / (Pt / X) n / Pt / Co / Ta$ ( $X$ = $Ta, Mn, Cu, V, Zr$ , $Bi$ ; n = 3, 4) multilayers based on a domain-wall-depinning model

Shuanghai Wang^1,2, Kun He^1,2, Yongkang Xu^1,2, Zhuoyi Li^1,2, Jin Wang^1,2, Caitao Li^1,2, Xingze Dai^1,2, Jun Du³, Yong-Lei Wang⁴ et al.

Ronghua Liu ^2,5, Xianyang Lu ^1,2, Yongbing Xu^1,2,*, and Liang He ^1,2,†

¹School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
²National Key laboratory of spintronics, Nanjing University, Suzhou, 215163, China
³National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
⁴Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
⁵Jiangsu Key Laboratory for Nanotechnology, Department of Physics, Nanjing University, Nanjing 210093, China

^*Contact author: ybxu@nju.edu.cn
^†Contact author: heliang@nju.edu.cn

PDF

Phys. Rev. Applied 22, L021002 – Published 29 August, 2024

DOI: https://doi.org/10.1103/PhysRevApplied.22.L021002

Abstract

In recent years, spin-orbit torque (SOT) generated by heavy metal (HM) has garnered increasing attention. However, SOT-magnetic random-access memory based on HM suffers from a low spin Hall angle and high current density. Here, we demonstrate that the critical switching-current density ( $I_{c}$ ) in a multilayer structure of $Ta / (Pt / Ta)_{4} / Pt / Co / Ta$ has been reduced by 79% compared with that of $Ta / Pt / Co / Ta$ , achieving a value of 5.88 × $10^{6} A / {cm}^{2}$ . This value is considerably low among all reported values in the $Pt / Co$ system literature. The reduction of $I_{c}$ is accompanied by enhanced dampinglike torque efficiency ( $β_{D}$ ) and reduced coercive force ( $H_{c}$ ). A perfect linear correlation has been observed between $I_{c}$ and $H_{c}$ / $β_{D}$ , which supports the domain-wall depinning model of the SOT-induced magnetization reversal in this system. Crucially, this linearity extends to several metal dopants possessing the identical superlattice structure. This research offers insights into the future of low-power, high-density magnetic memory technology based on HM materials.

Physical Review Applied

Export citation

Export citation

Lower switching-current density in $Ta / (Pt / X) n / Pt / Co / Ta$ ( $X$ = $Ta, Mn, Cu, V, Zr$ , $Bi$ ; n = 3, 4) multilayers based on a domain-wall-depinning model

Abstract

Physics Subject Headings (PhySH)

Authorization Required

Other Options

Supplemental Material (Subscription Required)

References (Subscription Required)

Outline

Information

Filter

Filter

Article Lookup

Enter a citation

Lower switching-current density in Ta/(Pt/X)n/Pt/Co/Ta (X = Ta,Mn,Cu,V,Zr, Bi; n = 3, 4) multilayers based on a domain-wall-depinning model

Abstract

Physics Subject Headings (PhySH)

Authorization Required

Log in via your institution

Log in via APS Member Subscription

Other Options

Supplemental Material (Subscription Required)

References (Subscription Required)

Lower switching-current density in $Ta / (Pt / X) n / Pt / Co / Ta$ ( $X$ = $Ta, Mn, Cu, V, Zr$ , $Bi$ ; n = 3, 4) multilayers based on a domain-wall-depinning model