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Laser-Induced Spectral Diffusion of T Centers in Silicon Nanophotonic Devices

Xueyue Zhang ^1,2,*, Niccolò Fiaschi ^1,2,3, Lukasz Komza ^2,4, Hanbin Song^4,5, Thomas Schenkel ³, and Alp Sipahigil ^1,2,4,†

¹Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, USA
²Department of Physics, University of California, Berkeley, Berkeley, California 94720, USA
³Accelerator Technology & Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
⁴Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
⁵Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA

^*Present address: Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA.
^†Contact author: alp@berkeley.edu

Exploring the feasibility of probabilistic and deterministic quantum gates between T centers in silicon

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Laser-Induced Spectral Diffusion and Excited-State Mixing of Silicon T Centers

Camille Bowness, Simon A. Meynell, Michael Dobinson, Chloe Clear, Kais Jooya, Nicholas Brunelle, Mehdi Keshavarz, Katarina Boos, Melanie Gascoine, Shahrzad Taherizadegan, Christoph Simon, Mike L.W. Thewalt, Stephanie Simmons, and Daniel B. Higginbottom

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Electrically triggered spin–photon devices in silicon

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Articles Citing

Laser-Induced Spectral Diffusion of T Centers in Silicon Nanophotonic Devices

Exploring the feasibility of probabilistic and deterministic quantum gates between T centers in silicon

Laser-Induced Spectral Diffusion and Excited-State Mixing of Silicon T Centers

Electrically triggered spin–photon devices in silicon

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