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Laser-Induced Spectral Diffusion and Excited-State Mixing of Silicon T Centers

Camille Bowness^1,2,*, Simon A. Meynell^1,2,*, Michael Dobinson ^1,2, Chloe Clear², Kais Jooya^1,2, Nicholas Brunelle ^1,2, Mehdi Keshavarz ^1,2, Katarina Boos ³, Melanie Gascoine ^1,2 et al.

Shahrzad Taherizadegan ^4,5, Christoph Simon ^4,5, Mike L.W. Thewalt ¹, Stephanie Simmons ^1,2, and Daniel B. Higginbottom ^1,2,†

¹Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6
²Photonic Inc., Coquitlam, British Columbia, Canada V3K 6T1
³Department of Electrical and Computer Engineering and Munich Center for Quantum Science and Technology (MCQST), Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
⁴Department of Physics and Astronomy, University of Calgary, Calgary, Alberta, Canada T2N 1N4
⁵Institute for Quantum Science and Technology, University of Calgary, Calgary, Alberta, Canada T2N 1N4

^*These authors contributed equally to this work.
^†Contact author: daniel_higginbottom@sfu.ca

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Articles Citing

Laser-Induced Spectral Diffusion and Excited-State Mixing of Silicon T Centers

Exploring the feasibility of probabilistic and deterministic quantum gates between T centers in silicon

Silicon T -center hyperfine structure and memory protection schemes

Laser-Induced Spectral Diffusion of T Centers in Silicon Nanophotonic Devices

Electrically triggered spin–photon devices in silicon

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