- Open Access
Effective Ionic Valence and Local Magnetic Moment in Kagome Superconductors
Phys. Rev. X 16, 031064 – Published 10 September, 2026
DOI: https://doi.org/10.1103/t5nf-jksr
Abstract
In order to understand the unexpected similarity and the correlated behavior in kagome superconductor families () and (), we investigate the Hartree-scale local electronic structure of these systems. Our result indicates that V and Ti ions are both of valence such that the corresponding itinerant carrier densities are similar, and the difference in electron count is instead reflected in their quantum fluctuating ionic magnetic moments. However, due to the frustrated lattice geometry of these materials, such local moments are difficult to experimentally observe via standard probes. For verification, we systematically introduce nonmagnetic Sn impurities to locally relieve the geometric frustration and experimentally demonstrate the existence of well-defined local magnetic moments via magnetic susceptibility and muon spin rotation or relaxation () measurements. All experiments discover a systematic increase of magnetic susceptibility upon increasing nonmagnetic impurity level. Our discovered ionic moments suggest a paradigm shift from the existing itinerant carrier-only picture to one incorporating strong correlation from local ionic spins. The associated interatomic and local-itinerant correlations offer a solid ground for the emergence of the observed rich correlated behavior in this new family of superconducting materials.
Physics Subject Headings (PhySH)
Popular Summary
The current interpretation of the magnetic properties of kagome superconductors mainly relies on low-energy itinerant carriers. We show using a combination of experiments and theory that, contrary to common belief, local moments of transition metal ions play an essential role in the electronic properties despite being hidden by the geometric frustration of the kagome lattice. We believe this work changes the current paradigm for the magnetism of kagome superconductors, demanding a revision of the physical understanding of the properties of these materials.
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