- Open Access
Deterministic 1D Domain Wall Motion with Nucleation-Free Nature in Sliding Ferroelectric Switching
Phys. Rev. X 16, 011066 – Published 26 March, 2026
DOI: https://doi.org/10.1103/q624-x397
Abstract
Inhomogeneous domain nucleation and stochastic motion of the domain wall (DW) during the polarization switching process in conventional ferroelectrics introduce a spectrum of intricate kinetic challenges for the reliable and precise manipulation of polarization states, a prerequisite for many ferroelectric implementations. Combining deep-learning-assisted molecular dynamics simulations, microscopic-scale in situ observations, and device-scale electrical measurements, it reveals that sliding ferroelectrics inherently circumvent these issues, with an intrinsic domain-nucleation-free polarization reversal. Using as a model system, we demonstrate that DW motion occurs along a well-defined 1D pathway in a collective manner, without domain nucleation. Leveraging this predictable domain dynamics, we demonstrate deterministic multistate polarization switching, achieving remarkable precision and repeatability with a variation coefficient of less than 0.2%, 10 times improved over conventional ferroelectrics. This work provides valuable insights into the unique kinetics of DW motion in sliding ferroelectrics and offers opportunities for ferroelectric multistate devices with ultraprecision control.
Physics Subject Headings (PhySH)
Popular Summary
In conventional ferroelectrics, stochastic domain nucleation and complex domain wall dynamics hinder applications that require reliable and precise polarization-state control. We develop rigorous theory and provide comprehensive experimental evidence to demonstrate that sliding ferroelectrics exhibit a domain nucleation-free nature, where polarization reversal is governed exclusively by domain wall motion along a well-defined 1D pathway. Our experimental results demonstrate multistate polarization modulation with a coefficient of variation below 0.2%, representing a tenfold improvement over conventional ferroelectrics. Our findings establish a distinct switching paradigm in sliding ferroelectrics and highlight their potential for ultrareliable neuromorphic and multibit memory devices.
Article Text
Supplemental Material
References (77)
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