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Strain-Tunable Anomalous Hall Effect in Hexagonal MnTe

Zhaoyu Liu1,2,*,†, Sijie Xu1,2,*, Jonathan M. DeStefano3, Elliott Rosenberg3, Tingjun Zhang1,2,4, Jinyulin Li5, Matthew B. Stone6, Feng Ye6, Wei Tian6 et al.

Sarah Edwards3, Rong Cong7, Siyu Pan1,2, Ching-Wu Chu5, Liangzi Deng5, Emilia Morosan1,2, Rafael M. Fernandes8,9, Jiun-Haw Chu3,‡, and Pengcheng Dai1,2,§

  • *These authors contributed equally to this work.
  • †Contact author: liuzy.phy@gmail.com
  • ‡Contact author: jhchu@uw.edu
  • §Contact author: pdai@rice.edu
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Phys. Rev. X 16, 031033 – Published 11 August, 2026

DOI: https://doi.org/10.1103/589s-s1yy

Abstract

The ability to control and manipulate time-reversal (T) symmetry-breaking phases with near-zero net magnetization is a sought-after goal in spintronic devices. The recently discovered hexagonal altermagnet manganese telluride (α-MnTe) is a prime example. It has a compensated altermagnetic ground state where the magnetic moments are aligned in each layer and stacked antiparallel along the c axis, yet it exhibits a spontaneous anomalous Hall effect (AHE) that breaks the T-symmetry with a vanishingly small c-axis ferromagnetic moment. However, the presence of three 120° separated in-plane magnetic domains presents a challenge in understanding the origin of the AHE and the effective control of the altermagnetic state. Here we use neutron scattering to show that symmetry breaking anisotropic strain, induced by compressive uniaxial pressure along the nearest-neighbor (NN) Mn-Mn bond directions, detwins α-MnTe into a single in-plane magnetic domain. This control over in-plane domains allows us to unambiguously establish that the in-plane moments are aligned along the next-nearest-neighbor (NNN) Mn-Mn bond direction, irrespective of the applied strain directions. Mounting the sample on a piezoelectric strain cell along both NN and NNN directions can drive the sample into a single-domain state that significantly sharpens the AHE hysteresis loop and extends the AHE to lower temperatures. Furthermore, tuning the uniaxial strain reverses the sign of the AHE near room temperature. Remarkably, this is achieved without altering the altermagnetic phase-transition temperature. Combined with our phenomenological model, we propose that these effects result from the modification of the electronic Berry curvature by a combination of both spin-orbit coupling and strain. Our work not only unambiguously establishes the relationship between the in-plane moment direction and the AHE in α-MnTe but also paves the way for future applications in highly scalable, strain-tunable magnetic sensors and spintronic devices.

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Popular Summary

Controlling and measuring the unique electronic properties of altermagnets remains difficult because these materials form multidomain structures whose individual magnetic signals cancel out on macroscopic scales. We addressed this challenge by applying uniaxial strain to the hexagonal altermagnet α-MnTe along specific manganese-manganese bond directions to successfully isolate a single magnetic domain. Our approach revealed a significantly sharper anomalous Hall effect and enabled a clean determination of the underlying magnetic configuration near room temperature. We found that the applied strain can reverse the sign of this electrical signal without shifting the magnetic transition temperature, a behavior pointing to a strain-induced reconfiguration of the electronic Berry curvature. These results provide an experimental demonstration of how mechanical forces can manipulate spin-dependent electronic transport in materials lacking net magnetization. Our work establishes a practical, device-ready method for controlling altermagnetic domains, advancing their integration into high-density spintronic components.

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Phys. Rev. X 16, 031033– Published 11 August, 2026
  • Received 26 February 2026
  • Revised 23 April 2026
  • Accepted 22 June 2026
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