Recent Articles

Steady one-dimensional domain wall motion in biaxial ferromagnets: Mapping of the Landau-Lifshitz equation to the sine-Gordon equation

R. Rama-Eiroa, R. M. Otxoa, P. E. Roy, and K. Y. Guslienko

Phys. Rev. B 101, 094416 (2020) - Published 16 March, 2020

NMR study of defect-induced magnetism in methylammonium lead iodide perovskite

Bilwadal Bandyopadhyay, Homnath Luitel, Sayantan Sil, Joydeep Dhar, Mahuya Chakrabarti, Palash Nath, Partha P. Ray, and Dirtha Sanyal

Phys. Rev. B 101, 094417 (2020) - Published 16 March, 2020

Magnetic phase diagram for Fe3−xMnxBO5

F. Damay, J. Sottmann, F. Lainé, L. Chaix, M. Poienar, P. Beran, E. Elkaim, F. Fauth, L. Nataf, A. Guesdon, A. Maignan, and C. Martin

Phys. Rev. B 101, 094418 (2020) - Published 16 March, 2020

Erratum: Lattice relaxation and energy band modulation in twisted bilayer graphene [Phys. Rev. B 96, 075311 (2017)]

Nguyen N. T. Nam and Mikito Koshino

Phys. Rev. B 101, 099901 (2020) - Published 16 March, 2020

Topological magnon bands in a room-temperature kagome magnet

H. Zhang, X. Feng, T. Heitmann, A. I. Kolesnikov, M. B. Stone, Y.-M. Lu, and X. Ke

Phys. Rev. B 101, 100405(R) (2020) - Published 16 March, 2020

Thermodynamics of the insulator-metal transition in dense liquid deuterium

M. P. Desjarlais, M. D. Knudson, and R. Redmer

Phys. Rev. B 101, 104101 (2020) - Published 16 March, 2020

Dynamic process and Uhlmann process: Incompatibility and dynamic phase of mixed quantum states

Hao Guo, Xu-Yang Hou, Yan He, and Chih-Chun Chien

Phys. Rev. B 101, 104310 (2020) - Published 16 March, 2020

Generation of coherence in an exactly solvable nonlinear nanomechanical system

A. K. Singh, L. Chotorlishvili, S. Srivastava, I. Tralle, Z. Toklikishvili, J. Berakdar, and S. K. Mishra

Phys. Rev. B 101, 104311 (2020) - Published 16 March, 2020

First-principles study of spin properties and laser-induced ultrafast spin dynamics in transition-metal oxide clusters TM3O30/+(TM=Fe,Co,andNi)

Pengpeng Wang, Mingyang Qiu, Xin Lu, Wei Jin, Chun Li, Georgios Lefkidis, and Wolfgang Hübner

Phys. Rev. B 101, 104414 (2020) - Published 16 March, 2020

Quantum critical scaling of gapped phases in nodal-line semimetals

Geo Jose and Bruno Uchoa

Phys. Rev. B 101, 115123 (2020) - Published 16 March, 2020

Pressure-driven Lifshitz transition in type-II Dirac semimetal NiTe2

Mengyao Qi, Chao An, Yonghui Zhou, Hao Wu, Bowen Zhang, Chunhua Chen, Yifang Yuan, Shuyang Wang, Ying Zhou, Xuliang Chen, Ranran Zhang, and Zhaorong Yang

Phys. Rev. B 101, 115124 (2020) - Published 16 March, 2020

Coherent band-edge oscillations and dynamic longitudinal-optical phonon mode splitting as evidence for polarons in perovskites

Z. Liu, C. Vaswani, L. Luo, D. Cheng, X. Yang, X. Zhao, Y. Yao, Z. Song, R. Brenes, R. J. H. Kim, J. Jean, V. Bulović, Y. Yan, K.-M. Ho, and J. Wang

Phys. Rev. B 101, 115125 (2020) - Published 16 March, 2020

Seebeck coefficient in low-dimensional fluctuating charge density wave systems

M. Mbodji and C. Bourbonnais

Phys. Rev. B 101, 115126 (2020) - Published 16 March, 2020

Electron-phonon interaction and zero-field charge carrier transport in the nodal-line semimetal ZrSiS

Alexander N. Rudenko and Shengjun Yuan

Phys. Rev. B 101, 115127 (2020) - Published 16 March, 2020

Two-spin entanglement induced by scattering of backscattering-free chiral electrons in a Chern insulator

M. Soltani and M. Amini

Phys. Rev. B 101, 115416 (2020) - Published 16 March, 2020

Enhancement of electron transport and band gap opening in graphene induced by adsorbates

Lan Chen, Fangping Ouyang, Songshan Ma, Tie-Feng Fang, Ai-Min Guo, and Qing-Feng Sun

Phys. Rev. B 101, 115417 (2020) - Published 16 March, 2020

Many-body approach to non-Hermitian physics in fermionic systems

Eunwoo Lee, Hyunjik Lee, and Bohm-Jung Yang

Phys. Rev. B 101, 121109(R) (2020) - Published 16 March, 2020

Electrically controlled dielectric band gap engineering in a two-dimensional semiconductor

Anders C. Riis-Jensen, Jiong Lu, and Kristian S. Thygesen

Phys. Rev. B 101, 121110(R) (2020) - Published 16 March, 2020

This work proposes and investigates a new physical concept of electrically controlled dielectric band gap engineering in a two-dimensional (2D) semiconductor. The authors show, using first-principles many-body calculations, that the band gap of a 2D semiconductor can be varied by several hundred meV’s by varying the doping concentration in a supporting graphene sheet as illustrated in the accompanying image. This provides a method for continuous and dynamical insitu tuning of the band gap. Importantly, the band gap adjustment is achieved via nonlocal Coulomb interactions and does not involve changes in the atomic structure, or even the shape or hybridization pattern, of the wave functions of the 2D semiconductor.

Low-rank Sachdev-Ye-Kitaev models

Jaewon Kim, Xiangyu Cao, and Ehud Altman

Phys. Rev. B 101, 125112 (2020) - Published 16 March, 2020

One-dimensional few-electron effective Wigner crystal in quantum and classical regimes

DinhDuy Vu and S. Das Sarma

Phys. Rev. B 101, 125113 (2020) - Published 16 March, 2020

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