Graphene under the influence of Aharonov-Bohm flux and constant magnetic field
E. A. Stepanov and V. Ch. Zhukovsky
Phys. Rev. B 94, 094101 (2016) - Published 1 September, 2016
Local atomic and magnetic structure of dilute magnetic semiconductor
Benjamin A. Frandsen, Zizhou Gong, Maxwell W. Terban, Soham Banerjee, Bijuan Chen, Changqing Jin, Mikhail Feygenson, Yasutomo J. Uemura, and Simon J. L. Billinge
Phys. Rev. B 94, 094102 (2016) - Published 6 September, 2016
Spintronics holds the promise of novel functionality and higher device performance, but a massive challenge is to find semiconducting materials with good electronic properties that are also ferromagnetic. Dilute magnetic semiconductors (DMS) such as Mn-doped GaAs have great potential but are notoriously difficult to make, only stabilizing in thin films in most cases. Recently, a promising new class of DMS materials based on the chemistry and structure of iron-based superconductors has been discovered, including the compound (Ba,K)(Zn,Mn)As. These materials can be synthesized in bulk form, providing an unprecedented opportunity to study the mechanism of ferromagnetism in semiconductors. In this work, the authors present detailed temperature-dependent characterization of the atomic and magnetic structure of (Ba,K)(Zn,Mn)As using x-ray and neutron pair distribution function techniques, establishing the existence of an unexpected structural distortion on a short length scale and surprisingly robust short-range ferromagnetic correlations that persist even at room temperature. These results fill in important gaps in the experimental understanding of DMS materials and provide valuable guidance to their theoretical description.
Structural and electronic transitions in induced by ion irradiation damage
S. M. S. Privitera, A. M. Mio, E. Smecca, A. Alberti, W. Zhang, R. Mazzarello, J. Benke, C. Persch, F. La Via, and E. Rimini
Phys. Rev. B 94, 094103 (2016) - Published 6 September, 2016
Carbon nitride frameworks and dense crystalline polymorphs
Chris J. Pickard, Ashkan Salamat, Michael J. Bojdys, Richard J. Needs, and Paul F. McMillan
Phys. Rev. B 94, 094104 (2016) - Published 8 September, 2016
Stability of two-dimensional BN-Si structures
Ernesto D. Sandoval, Samad Hajinazar, and Aleksey N. Kolmogorov
Phys. Rev. B 94, 094105 (2016) - Published 9 September, 2016
Enabling adiabatic passages between disjoint regions in parameter space through topological transitions
Tiago Souza, Michael Tomka, Michael Kolodrubetz, Steven Rosenberg, and Anatoli Polkovnikov
Phys. Rev. B 94, 094106 (2016) - Published 9 September, 2016
Photovoltaic response around a unique ferroelectric domain wall in single-crystalline
C. Blouzon, J-Y. Chauleau, A. Mougin, S. Fusil, and M. Viret
Phys. Rev. B 94, 094107 (2016) - Published 12 September, 2016
Optically detected magnetic resonances of nitrogen-vacancy ensembles in -enriched diamond
A. Jarmola, Z. Bodrog, P. Kehayias, M. Markham, J. Hall, D. J. Twitchen, V. M. Acosta, A. Gali, and D. Budker
Phys. Rev. B 94, 094108 (2016) - Published 14 September, 2016
First-principles prediction of the softening of the silicon shock Hugoniot curve
S. X. Hu (胡素兴), B. Militzer, L. A. Collins, K. P. Driver, and J. D. Kress
Phys. Rev. B 94, 094109 (2016) - Published 15 September, 2016
Atomistic origins of pressure-induced changes in the O -edge x-ray Raman scattering features of and polymorphs: Insights from ab initio calculations
Yoo Soo Yi and Sung Keun Lee
Phys. Rev. B 94, 094110 (2016) - Published 26 September, 2016
Phase and structural stability in Ni-Al systems from first principles
Jon Gabriel Goiri and Anton Van der Ven
Phys. Rev. B 94, 094111 (2016) - Published 27 September, 2016
Ab initio phase diagram of iridium
L. Burakovsky, N. Burakovsky, M. J. Cawkwell, D. L. Preston, D. Errandonea, and S. I. Simak
Phys. Rev. B 94, 094112 (2016) - Published 28 September, 2016
Positive and negative electrocaloric effect in in the presence of defect dipoles
Yang-Bin Ma, Anna Grünebohm, Kai-Christian Meyer, Karsten Albe, and Bai-Xiang Xu
Phys. Rev. B 94, 094113 (2016) - Published 29 September, 2016
Electronic excitation-induced semiconductor-to-metal transition in monolayer
A. V. Kolobov, P. Fons, and J. Tominaga
Phys. Rev. B 94, 094114 (2016) - Published 29 September, 2016
