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Dielectric Relaxation Mechanism in the Phase-Transition Region of a Chiral Hybrid Perovskite and Its Piezoelectric-Energy-Harvesting Properties

Aditi Sahoo, Tufan Paul, Pulak Pal, Nisha Hiralal Makani, Aswini Ghosh, and Rupak Banerjee

Phys. Rev. Applied 20, 034024 (2023) - Published 12 September, 2023

Electric Field Control of Chiral Magnonic Resonators for Spin-Wave Manipulation

Yat-Yin Au and Kevin G. Fripp

Phys. Rev. Applied 20, 034023 (2023) - Published 12 September, 2023

Highly Efficient Coherent Energy Transfer in Molecules near a MoS2 Nanodisk

Natalia Domenikou, Ioannis Thanopulos, Vasilios Karanikolas, and Emmanuel Paspalakis

Phys. Rev. Applied 20, 034022 (2023) - Published 12 September, 2023

Brainlike Networks of Nanowires and Nanoparticles: A Change of Perspective

Ryan. K. Daniels, Matthew D. Arnold, Zachary E. Heywood, Joshua B. Mallinson, Philip J. Bones, and Simon A. Brown

Phys. Rev. Applied 20, 034021 (2023) - Published 12 September, 2023

Laser-Generated Ultrasonic Vortex in the Megahertz Frequency Range

Hui Zhou, Ze-Ru Yang, Qiu-Yu Li, Chao Zeng, Si-Yu Liu, Zhong-Hua Shen, and Wei-Wei Kan

Phys. Rev. Applied 20, 034020 (2023) - Published 11 September, 2023

Quantum Control of Rydberg Atoms for Mesoscopic Quantum State and Circuit Preparation

Valerio Crescimanna, Jacob Taylor, Aaron Z. Goldberg, and Khabat Heshami

Phys. Rev. Applied 20, 034019 (2023) - Published 11 September, 2023

Method for In-Solution, High-Throughput T1 Relaxometry Using Fluorescent Nanodiamonds

Erin S. Grant, Mina Barzegar Amiri Olia, Yang Li, Ella P. Walsh, Gawain McColl, Liam T. Hall, and David A. Simpson

Phys. Rev. Applied 20, 034018 (2023) - Published 11 September, 2023

Acoustically Induced Spin Resonances of Silicon-Vacancy Centers in 4H-SiC

T. Vasselon, A. Hernández-Mínguez, M. Hollenbach, G.V. Astakhov, and P.V. Santos

Phys. Rev. Applied 20, 034017 (2023) - Published 11 September, 2023

Silicon vacancies in 4H-SiC are color centers with promising applications in quantum technologies, but spin control of the centers generated in a hexagonal local crystallographic environment has yet to be demonstrated above cryogenic temperatures. The authors use the dynamic strain of surface acoustic waves to overcome this limitation and efficiently excite spin transitions in the excited states of these color centers up to room temperature. The acoustic spin control of silicon vacancies opens possibilities for the implementation of efficient quantum spin control and sensing protocols using spin optomechanics.

Characterization of Loss Mechanisms in a Fluxonium Qubit

Hantao Sun, Feng Wu, Hsiang-Sheng Ku, Xizheng Ma, Jin Qin, Zhijun Song, Tenghui Wang, Gengyan Zhang, Jingwei Zhou, Yaoyun Shi, Hui-Hai Zhao, and Chunqing Deng

Phys. Rev. Applied 20, 034016 (2023) - Published 8 September, 2023

Effect of Depolarizing and Quenching Collisions on the Contrast of Coherent Population Trapping Resonance

K.M. Sabakar, M.I. Vaskovskaya, D.S. Chuchelov, E.A. Tsygankov, V.V. Vassiliev, S.A. Zibrov, and V.L. Velichansky

Phys. Rev. Applied 20, 034015 (2023) - Published 8 September, 2023

Large and Optimized Thermal Chiral Anomaly in Weyl Semimetal Bi-Sb

Joon Sang Kang, Dung Vu, Minyue Zhu, and Joseph P. Heremans

Phys. Rev. Applied 20, 034014 (2023) - Published 8 September, 2023

Asymmetric Heat Transfer with Linear Conductive Metamaterials

Yishu Su, Ying Li, Minghong Qi, Sebastien Guenneau, Huagen Li, and Jian Xiong

Phys. Rev. Applied 20, 034013 (2023) - Published 7 September, 2023

Formation of a Dirac Cone and Dynamic Control of its Half-Metallic Properties Using Double-Layer Ring Dipole Arrays

Go Itami and Osamu Sakai

Phys. Rev. Applied 20, 034012 (2023) - Published 7 September, 2023

Near-Room-Temperature Single-Photon Emission from a Strongly Confined Piezoelectric InAs Quantum Dot

N. G. Chatzarakis, S. Germanis, I. Thyris, C. Katsidis, A. Stavrinidis, G. Konstantinidis, Z. Hatzopoulos, and N. T. Pelekanos

Phys. Rev. Applied 20, 034011 (2023) - Published 7 September, 2023

Large Tunneling Electroresistance, Tunneling Magnetoresistance, and Regulatable Negative Differential Conductance in a van der Waals Antiferroelectric Multiferroic Tunnel Junction

Yu Zhu, Boyuan Chi, Leina Jiang, Xiaoyan Guo, Yu Yan, and Xiufeng Han

Phys. Rev. Applied 20, 034010 (2023) - Published 7 September, 2023

Frequency-Multiplexed Transmitted-Wave Manipulation with Multifunctional Acoustic Metasurfaces

Haoyi Cheng, Jingwen Guo, Xin Zhang, and Wenjing Ye

Phys. Rev. Applied 20, 034009 (2023) - Published 6 September, 2023

Periodic-Phase Acoustic Vortices with Tunable Comblike Orbital Angular Momentum Spectrum

Xin-Rui Li, Jia-Jia Feng, Bu-Chen Ping, Yang Sun, Da-Jian Wu, and Badreddine Assouar

Phys. Rev. Applied 20, 034008 (2023) - Published 6 September, 2023

Multitone Microwave Frequency Locking to a Noisy Cavity via Real-Time Feedback

J.P. van Soest, C.A. Potts, S. Peiter, A. Sanz Mora, and G.A. Steele

Phys. Rev. Applied 20, 034007 (2023) - Published 6 September, 2023

Damping in Free Layers of Spin-Transfer-Torque Magnetic Memory at Elevated Temperatures

Adam Whitney, Chuanpu Liu, Tiffany S. Santos, Rajesh V. Chopdekar, Matthew Carey, Galen Street, Vijaysankar Kalappattil, Keira Leistikow, and Mingzhong Wu

Phys. Rev. Applied 20, 034006 (2023) - Published 6 September, 2023

The efficiency of spin-transfer-torque magnetic random-access memory (MRAM) critically depends on the damping of the free layer. As MRAM cells operate above room temperature, it is crucial to determine the damping parameter of the free layer at elevated temperatures. This study uses ferromagnetic resonance techniques to measure the damping of MRAM free layers up to 520 K. The data show significant differences in temperature dependence between conventional and low-damping free-layer designs, paving the way for MRAM cells with lower switching current. These insights could impact the development of more efficient and thermally stable MRAM technologies.

Highly Sensitive Temperature Sensing Using the Silicon Vacancy in Silicon Carbide by Simultaneously Resonated Optically Detected Magnetic Resonance

Yuichi Yamazaki, Yuta Masuyama, Kazutoshi Kojima, and Takeshi Ohshima

Phys. Rev. Applied 20, L031001 (2023) - Published 5 September, 2023

Quantum sensors based on silicon vacancies (VSi) in SiC are crucial for precise device design and simulations, but their practical application is hampered by the low sensitivity of temperature. This study introduces a temperature measurement protocol that increases signal intensity by an order of magnitude. By diverting part of the ground state optically detected magnetic resonance signal for temperature measurement, and leveraging simultaneous resonance of the ground state and excited state, the protocol significantly boosts performance. This leap in measurement sensitivity could make VSi-based quantum sensors far more effective and versatile.

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