Quantum sensors using silicon vacancy ($V_{\mathrm{Si}}$) in silicon carbide ($\mathrm{Si}\mathrm{C}$) are expected to be capable of directly measuring inside $\mathrm{Si}\mathrm{C}$ devices. It is a serious problem that we have to employ the excited state (ES) of $V_{\mathrm{Si}}$ with very low temperature sensitivity for quantum sensing due to there being no temperature sensitivity for the ground state (GS). Here, we propose a temperature measurement protocol, simultaneously resonated optically detected magnetic resonance (SRODMR), based on the modulation of the GS ODMR response resulting from simultaneous resonance of both GS and ES. This protocol diverts part of the GS ODMR contrast to temperature measurement, and in principle, temperature can be measured at an equivalent signal intensity to that of GS ODMR. SRODMR improves signal intensity by 1 order of magnitude compared with the conventional method (ES ODMR), leading to temperature measurements with a smaller error.

Close

PrevNext

View figure in article

• Quantum sensing
• Silicon vacancies
• Carbides
• Semiconductor compounds
• Optically detected magnetic resonance
• Thermometry