Two-dimensional (2D) semiconductors, graphene, , and black phosphorus, have attracted tremendous interest for their unique mechanical, electronic, optical, and magnetic properties. However, few of the previously studied systems are perfect for practical electronic and optoelectronic applications due to limitations such as zero band gap, low carrier mobility, severe instability, or low absorption coefficient. Here, we predict an alternative ultrathick 2D semiconducting with high mobility () and large absorption coefficient (). Intriguingly, the electronic band gap of 2D exhibits an indirect-direct transition with increasing thickness, which is opposite to that observed in many 2D transition metal disulfides. Importantly, compared with the monolayer, bilayer possesses stronger light harvesting, higher mobility, and larger on-state current by about one order of magnitude due to electronic states’ rehybridization with charge accumulation in the interlayer region. All these features suggest 2D as a promising competitor for future high-performance infrared electronic and optoelectronic applications.