State-of-the-art spin-transfer-torque magnetic random access memory (STT MRAM) is based on out-of-plane magnetized magnetic tunnel junctions (pMTJ), which commonly comprise a composite storage layer (CSL) of the form /nonmagnetic spacer (e.g., , , )/. Because STT MRAM has to operate over a wide range of temperature (e.g., −40 °C to 150 °C for automotive applications), it is desirable to minimize the temperature variation of the magnetic and transport properties of pMTJs. In this context, we report an alternative design of a dual- CSL of the form “”, which brings additional degrees of freedom, to further improve the performance of the storage layer. In particular, this design reduces the thermal variation of magneto-transport properties of dual-W CSL. A detailed investigation of the thermal variation of magnetic and electrical properties of such dual- CSLs for various ferromagnet insertions, as characterized by different exchange stiffnesses, is reported. In particular, cobalt insertion between two laminations significantly enhances the effective perpendicular anisotropy () at room temperature, relative to that of the conventional composite storage layer (), and reduces the relative thermal variation of in the range 300–400 K. Moreover, STT MRAM cells with diameters of 80 nm comprising inserted into dual- CSL exhibit, on average, 15% and 38% higher thermal stability factors, as well as 26% and 15% higher tunneling magnetoresistance ratios at room temperature and 110 °C, respectively, than those of conventional CSLs. These observations are interpreted in terms of magnetic stiffening of the storage layer achieved thanks to the very high Curie temperature (1388 K) of cobalt.