Recent Articles

Characterizing Quantum Devices at Scale with Custom Cryo-CMOS

S.J. Pauka, K. Das, J.M. Hornibrook, G.C. Gardner, M.J. Manfra, M.C. Cassidy, and D.J. Reilly

Phys. Rev. Applied 13, 054072 (2020) - Published 28 May, 2020

Nonaxisymmetric Effects in Drop-On-Demand Piezoacoustic Inkjet Printing

Mark-Jan van der Meulen, Hans Reinten, Herman Wijshoff, Michel Versluis, Detlef Lohse, and Paul Steen

Phys. Rev. Applied 13, 054071 (2020) - Published 28 May, 2020

Parametric Generation of Subharmonics in a Composite Multiferroic Resonator

D.A. Burdin, D.V. Chashin, N.A. Ekonomov, V. L. Preobrazhenskii, S.N. Gordeev, and Y.K. Fetisov

Phys. Rev. Applied 13, 054070 (2020) - Published 27 May, 2020

Acoustic Characterization of Polydimethylsiloxane for Microscale Acoustofluidics

Guangyao Xu, Zhengyang Ni, Xizhou Chen, Juan Tu, Xiasheng Guo, Henrik Bruus, and Dong Zhang

Phys. Rev. Applied 13, 054069 (2020) - Published 27 May, 2020

Acoustically Driving the Single-Quantum Spin Transition of Diamond Nitrogen-Vacancy Centers

H. Y. Chen, S. A. Bhave, and G. D. Fuchs

Phys. Rev. Applied 13, 054068 (2020) - Published 27 May, 2020

Transition Waves and Formation of Domain Walls in Multistable Mechanical Metamaterials

H. Yasuda, L. M. Korpas, and J. R. Raney

Phys. Rev. Applied 13, 054067 (2020) - Published 27 May, 2020

Vertical Transistors with Conductive-Network Electrodes: A Physical Image and What It Tells

Chuan Liu, Zihao Chen, Kairong Huang, Sujuan Hu, Xiaoci Liang, and Jun Chen

Phys. Rev. Applied 13, 054066 (2020) - Published 27 May, 2020

Visual representations of the voltages, currents, and electric potentials of vertical transistors could help engineers design circuits employing these advanced devices.

Experimental Passive-State Preparation for Continuous-Variable Quantum Communications

Bing Qi, Hyrum Gunther, Philip G. Evans, Brian P. Williams, Ryan M. Camacho, and Nicholas A. Peters

Phys. Rev. Applied 13, 054065 (2020) - Published 26 May, 2020

Excitation of Bloch Surface Waves in Zero-Admittance Multilayers for High-Sensitivity Sensor Applications

Dikai Niu, Myriam Zerrad, Aude Lereu, Antonin Moreau, Julien Lumeau, Juan Antonio Zapien, Ali Passian, Vincent Aubry, and Claude Amra

Phys. Rev. Applied 13, 054064 (2020) - Published 26 May, 2020

Photon-Dressed Bloch-Siegert Shift in an Ultrastrongly Coupled Circuit Quantum Electrodynamical System

Shuai-Peng Wang, Guo-Qiang Zhang, Yimin Wang, Zhen Chen, Tiefu Li, J. S. Tsai, Shi-Yao Zhu, and J. Q. You

Phys. Rev. Applied 13, 054063 (2020) - Published 26 May, 2020

Quantum Advantage in Cryptography with a Low-Connectivity Quantum Annealer

Feng Hu, Lucas Lamata, Chao Wang, Xi Chen, Enrique Solano, and Mikel Sanz

Phys. Rev. Applied 13, 054062 (2020) - Published 26 May, 2020

Thermodynamic, Structural, and Piezoelectric Properties of Adatom-Doped Phosphorene and Its Applications in Smart Surfaces

Lou Li, Huiying Cao, Bo Xu, Junkai Deng, Jingran Liu, Yilun Liu, Xiangdong Ding, Jun Sun, and Jefferson Zhe Liu

Phys. Rev. Applied 13, 054061 (2020) - Published 26 May, 2020

Enhancing Quantum Control by Improving Shaped-Pulse Generation

John P.S. Peterson, Roberto S. Sarthour, and Raymond Laflamme

Phys. Rev. Applied 13, 054060 (2020) - Published 22 May, 2020

Simulating Ising Spins in External Magnetic Fields with a Network of Degenerate Optical Parametric Oscillators

Hiroki Takesue, Kensuke Inaba, Takahiro Inagaki, Takuya Ikuta, Yasuhiro Yamada, Toshimori Honjo, Takushi Kazama, Koji Enbutsu, Takeshi Umeki, and Ryoichi Kasahara

Phys. Rev. Applied 13, 054059 (2020) - Published 22 May, 2020

Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe2

S. Davari, J. Stacy, A.M. Mercado, J.D. Tull, R. Basnet, K. Pandey, K. Watanabe, T. Taniguchi, J. Hu, and H.O.H. Churchill

Phys. Rev. Applied 13, 054058 (2020) - Published 22 May, 2020

Devices based on few-layer transition-metal dichalcogenides are rapidly being developed for various quantum technologies, such as valleytronic qubits and quantum emitters. Gate-defined quantum dots provide an appealing platform for coherent control of individual valley pseudospins, but well-resolved, discrete energy levels are required. The authors report gate-defined quantum dots in monolayer and bilayer WSe2, small enough to allow observation of transport through discrete levels. These devices thus satisfy an essential requirement for the development of (opto)electronic qubits based on valley-pseudospin states.

Practical Applications of Quantum Sensing: A Simple Method to Enhance the Sensitivity of Nitrogen-Vacancy-Based Temperature Sensors

E. Moreva, E. Bernardi, P. Traina, A. Sosso, S. Ditalia Tchernij, J. Forneris, F. Picollo, G. Brida, Ž. Pastuović, I. P. Degiovanni, P. Olivero, and M. Genovese

Phys. Rev. Applied 13, 054057 (2020) - Published 22 May, 2020

Self-Induced Passive Nonreciprocal Transmission by Nonlinear Bifacial Dielectric Metasurfaces

Boyuan Jin and Christos Argyropoulos

Phys. Rev. Applied 13, 054056 (2020) - Published 22 May, 2020

Strong Skyrmion Oscillations Driven by Spatially Dependent Spin Current

Renhao Xing, Yuanshi Kou, Yasai Wang, Jiayang Zhou, Yucong Wei, Long You, Rui Xiong, Zhongming Zeng, Shiheng Liang, Xiaofei Yang, Zhendong Zhang, and Yue Zhang

Phys. Rev. Applied 13, 054055 (2020) - Published 21 May, 2020

Active Temporal Control of Radiative Heat Transfer with Graphene Nanodisks

Lauren Zundel and Alejandro Manjavacas

Phys. Rev. Applied 13, 054054 (2020) - Published 21 May, 2020

Composite-Fringe Atom Interferometry for High-Dynamic-Range Sensing

Chen Avinadav, Dimitry Yankelev, Ofer Firstenberg, and Nir Davidson

Phys. Rev. Applied 13, 054053 (2020) - Published 21 May, 2020

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