Accepted Papers

Exponential size scaling of ultrafast all-optical switching reveals bias-fluctuation competition

Danny Petty Gweha Nyoma, Daniel Lacour, Michel Hehn, Gregory Malinowski, Eric E. Fullerton, Stéphane Mangin, and Francois Montaigne

Accepted 6 October, 2026

Nanophotonic quantum magnetometry in a spin-dense diamond cavity

Nicholas J. Sorensen, Elham Zohari, Joshua S. Wildeman, Sigurd Flågan, Vinaya K. Kavatamane, and Paul E. Barclay

Accepted 6 October, 2026

Three-dimensional tomography of exchange phase in voltage space in a Si/Si-Ge quantum dot device

Dylan Albrecht, Sarah Thompson, N. Tobias Jacobson, and Ryan Jock

Accepted 5 October, 2026

Large spin-orbit-torque efficiency and low critical-current density in β-W/X (X = Ti, V, Cr, Ru, Ta) multilayers

Xing He, Hengan Zhou, Aoran Gao, Haochen Guo, Jintao Ke, Yalong Liu, Yang Wang, Qiuyun Zhou, Wenlong Yang, Enlong Liu, Dinggui Zeng, Shikun He, and Wanjun Jiang

Accepted 5 October, 2026

Superthermal light tailored for compressive-sensing ghost imaging

Xiangyu Liu, Zilin Chen, Wuhong Zhang, and Lixiang Chen

Accepted 5 October, 2026

Dispersive mode coupling in p-doped semiconductor nanomechanical resonators

Ankang Liu, Mahmoud T. Elewa, and M. I. Dykman

Accepted 5 October, 2026

Autonomous multi-ion optical clock with on-chip integrated photonic light delivery

Tharon D. Morrison, Joonhyuk Kwon, Matthew A. Delaney, Michael Gehl, David R. Leibrandt, Daniel Stick, and Hayden J. McGuinness

Accepted 5 October, 2026

Deterministically addressing spins at clock transitions with a frequency- and bandwidth-tunable superconducting resonator

Yutian Wen, V. Ranjan, T. Lorriaux, D. Vion, B. Huard, A. Bienfait, E. Flurin, and P. Bertet

Accepted 5 October, 2026

Charge control in diamond photoemission via graphitic microchannels

Roberto Flammini, Matteo Mastellone, Eleonora Bolli, Giorgia Sementilli, Rahul Parmar, Matteo Amati, Luca Gregoratti, Alessandro Bellucci, and Daniele M. Trucchi

Accepted 5 October, 2026

Random-party distillation on a superconducting processor

Alexander C. B. Greenwood, Jackson Russett, Hoi-Kwong Lo, and Li Qian

Accepted 5 October, 2026

Phonon-blocked junction calorimeter

Zhuoran Geng, Joel Hätinen, Emma Mykkänen, Mika Prunnila, and Ilari J. Maasilta

Accepted 2 October, 2026

Interaction-resilient scalable fluxonium architecture with all-microwave gates

Andrei A. Kugut, Grigoriy S. Mazhorin, and Ilya A. Simakov

Accepted 2 October, 2026

Enhancing the magneto-optical Kerr effect in noncollinear antiferromagnets via a dielectric layer

Effie Gong, Myoung-Woo Yoo, and Axel Hoffmann

Accepted 2 October, 2026

Synthetic area spread in two-dimensional arrays of superconducting quantum interference filters

R. D. Monaghan, J. L. Marenkovic, and G. C. Tettamanzi

Accepted 2 October, 2026

Two-qubit-gate operation in a high-connectivity transmon lattice utilizing a tunable coupling to a shared mode

Tuure Orell, Hao Hsu, Joona Andersson, Jani Tuorila, Frank Deppe, and Hsiang-Sheng Ku

Accepted 2 October, 2026

Compositionally tuned phase transformations enhance pyroelectric energy harvesting from low-grade heat

Ruiheng Geng, Ka Hung Chan, Xinyue Huang, Nobumichi Tamura, Faqiang Zhang, Wanjia Han, Yang Zhang, Chenbo Zhang, and Xian Chen

Accepted 2 October, 2026

Tailoring the properties of YBa2Cu3O7−δ thin films by 30-keV He+ irradiation: An enabling route to superconducting-device nanopatterning

Bernd Aichner, Simon Koch, Philipp A. Korner, Max Karrer, Katja Wurster, Christoph Schmid, Ulrich Kentsch, Reinhold Kleiner, Edward Goldobin, Dieter Koelle, and Wolfgang Lang

Accepted 2 October, 2026

Accurate vector magnetometer via Zeeman Rabi oscillations

T. S. Menon, D. P. Hewatt, C. Kiehl, M. Ellmeier, S. Knappe, and C. A. Regal

Accepted 1 October, 2026

Tailoring oxygen vacancies in WO3 through Y2O3 incorporation for high-performance memristors and neuromorphic synaptic emulation

Zicong Guo, Hongjun Wang, Mengyao Chen, Miao Zhang, Sicong Zhu, Fangqi Liu, Yuanyuan Zhu, Yong Liu, and Rui Xiong

Accepted 1 October, 2026

Artificial synaptic device based on an AlSb/Al(As, Sb) and InAs/In(As, Sb) superlattice heterojunction for visual simulation

Dexiang Li, Jian Zhang, Tao Zhang, Zhe Li, Zian Hong, Zhaotan Gao, Liangqing Zhu, Biao Yue, Gongrong Deng, Yawei Li, Liyan Shang, Jinzhong Zhang, and Zhigao Hu

Accepted 1 October, 2026

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