The optoelectronic heterojunction devices are one of hot research topics for realizing artificial vision bionics. However, simultaneously achieving nonvolatile storage, monolithic scalability, and long-term stability remains a significant challenge. Here, we propose an artificial optoelectronic synaptic device based on the AlSb/AlAsSb and InAs/InAsSb superlattices (SLs) heterojunction, which can integrate sensing and storage functions. By employing strain-compensated molecular beam epitaxy (MBE) technique, a barrier SLs heterostructure introducing localized trap centers was constructed. This architecture efficiently regulates transport carriers under the stimulation from visible light (405,nm), leading to long-term persistent photoconductivity (PPC). The device displays biological synaptic functions, including short/long-term plasticity, paired-pulse facilitation (PPF) and learning-experience behaviors similar to those of human beings. Especially, it demonstrates a high PPF index of 138% and favorable process compatibility. Furthermore, we fabricated a 5$$5 optoelectronic synaptic array and successfully demonstrated the processes of visual imaging and memory functions as well as neuromorphic visual preprocessing with an improved processing efficiency and accuracy in subsequent image recognition tasks. This work underscores the potential of III-V SLs heterostructure as a scalable platform for next-generation biomimetic visual perception systems.