- Open Access
rf quantum capacitance parametric amplifier
Phys. Rev. Applied 26, 044053 – Published 19 October, 2026
DOI: https://doi.org/10.1103/3146-fgdw
Abstract
We report an rf parametric amplifier that exploits the gate-tunable quantum capacitance of a semiconductor two-dimensional electron gas at cryogenic temperatures. The prototype amplifier exhibits a gain approximately 30 dB up to an input power of and a noise temperature at approximately 370 MHz while dissipating approximately a microwatt of power. Operable at tesla-scale magnetic fields and temperatures ranging from millikelvin to a few kelvin, the quantum capacitance parametric amplifier may find utility in the readout circuit of spin qubits. Here, a quantum dot system is used to verify amplifier performance, improving the signal-to-noise ratio of the readout by approximately 9 dB.
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References (70)
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