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Modeling the Impact of Device Imperfections on Electron Shuttling in SiMOS devices

Jack J. Turner ^1,*, Christian W. Binder^1,2, Guido Burkard ³, and Andrew J. Fisher ^1,4

¹Quantum Motion, 9 Sterling Way, London N7 9HJ, United Kingdom
²Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PJ, United Kingdom
³Department of Physics, University of Konstanz, D-78457 Konstanz, Germany
⁴Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, London WC1E 6BT, United Kingdom

^*Contact author: jack.turner@quantummotion.tech

Numerical simulation of charged-defect-induced decoherence in conveyor-mode spin qubit shuttling in Si/SiGe

Nils Ciroth, Arnau Sala, Ran Xue, Lasse Ermoneit, Thomas Koprucki, Markus Kantner, and Lars R. Schreiber

Phys. Rev. B 114 105305 (2026)

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