Articles Citing

Anyon-Trions in Atomically Thin Semiconductor Heterostructures

Nader Mostaan ^1,2,*, Nathan Goldman ^3,4,5, Ataç İmamoğlu ⁶, and Fabian Grusdt ^1,2

¹Department of Physics and Arnold Sommerfeld Center for Theoretical Physics (ASC), Ludwig-Maximilians-Universität München, Theresienstr. 37, München D-80333, Germany
²Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München D-80799, Germany
³Laboratoire Kastler Brossel, Collège de France, CNRS, ENS-Université PSL, Sorbonne Université, 11 Place Marcelin Berthelot, Paris 75005, France
⁴International Solvay Institutes, Brussels 1050, Belgium
⁵CENOLI, Université Libre de Bruxelles, CP 231, Campus Plaine, Brussels B-1050, Belgium
⁶Institute for Quantum Electronics, ETH Zürich, Zürich CH-8093, Switzerland

^*Contact author: nader.mostaan@physik.uni-muenchen.de

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Articles Citing

Anyon-Trions in Atomically Thin Semiconductor Heterostructures

Sensing the binding and unbinding of anyons at impurities

Exciton-Anyon Binding in Fractional Chern Insulators: Spectral Fingerprints

Discernible signatures of fractionally charged anyons in a Pfaffian-Laughlin state

Thermal ionization of impurity-bound quasiholes in the fractional quantum Hall effect

Interferometric braiding of anyons in Chern insulators

A hybrid Anyon-otto thermal machine

Signatures of fractional charges via anyon–trions in twisted MoTe2

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