Articles Citing

Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

C. Avogadri ¹, S. Gebert ^1,2, S. S. Krishtopenko ¹, I. Castillo¹, C. Consejo¹, S. Ruffenach¹, C. Roblin¹, C. Bray¹, Y. Krupko¹ et al.

S. Juillaguet¹, S. Contreras¹, A. Wolf³, F. Hartmann³, S. Höfling³, G. Boissier², J.-B. Rodriguez ², S. Nanot¹, E. Tournié², F. Teppe^1,*, and B. Jouault ^1,†

¹Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS–Université de Montpellier, Montpellier, France
²Institut d'Electronique et des Systèmes (IES), UMR 5214 CNRS–Université de Montpellier, Montpellier, France
³Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Am Hubland, D-97074 Würzburg, Germany

^*frederic.teppe@umontpellier.fr
^†benoit.jouault@umontpellier.fr

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Magnetic field induced corner states in quantum spin Hall insulators

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Many-particle hybridization of optical transitions from zero-mode Landau levels in HgTe quantum wells

S. Ruffenach, S. S. Krishtopenko, A. V. Ikonnikov, C. Consejo, J. Torres, X. Baudry, P. Ballet, B. Jouault, and F. Teppe

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Friedel oscillations in two-dimensional materials with inverted bands and Mexican-hat dispersion

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Quasiparticle picture of topological phase transitions induced by interactions

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Effects of short- and long-range disorder in the photoluminescence of GaAs1−xSbx/GaAs quantum wells

G. M. Jacobsen, B. Liang, S. Kryvyi, H. V. Stanchu, M. Benamara, V. A. Oliveira, M. E. Ware, G. J. Salamo, Yu. I. Mazur, G. E. Marques, and M. D. Teodoro

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Multisubband plasmons in an InAs/GaSb broken-gap quantum well

Wojciech Julian Pasek, Soufiane Hajji, Oussama Tata, Laurent Cerutti, Fernando Gonzalez-posada Flores, Simon Hurand, Abdelouahed El Fatimy, and Thierry Taliercio

Phys. Rev. B 112 205412 (2025)

Thermoelectric effects in two-dimensional topological insulators

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Hybridization Gap and Edge States in Strained-Layer InAs/In0.5Ga0.5Sb Quantum Spin Hall Insulator

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Coexistence of topological and normal insulating phases in electro-optically tuned InAs/GaSb bilayer quantum wells

M. Meyer, T. Fähndrich, S. Schmid, A. Wolf, S. S. Krishtopenko, B. Jouault, G. Bastard, F. Teppe, F. Hartmann, and S. Höfling

Phys. Rev. B 109 L121303 (2024)

Multiprobe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence

S. Benlemqwanssa, S.S. Krishtopenko, M. Meyer, B. Benhamou–Bui, L. Bonnet, A. Wolf, C. Bray, C. Consejo, S. Ruffenach, S. Nanot, J.-B. Rodriguez, E. Tournié, F. Hartmann, S. Höfling, F. Teppe, and B. Jouault

Phys. Rev. Applied 22 064059 (2024)

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Articles Citing

Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

Interband plasmons due to Mexican hat dispersion in two-dimensional materials with inverted bands

Magnetic field induced corner states in quantum spin Hall insulators

Many-particle hybridization of optical transitions from zero-mode Landau levels in HgTe quantum wells

Quantum spin Hall effect in III-V semiconductors at elevated temperatures: Advancing topological electronics

Friedel oscillations in two-dimensional materials with inverted bands and Mexican-hat dispersion

Quasiparticle picture of topological phase transitions induced by interactions

Effects of short- and long-range disorder in the photoluminescence of GaAs1−xSbx/GaAs quantum wells

Multisubband plasmons in an InAs/GaSb broken-gap quantum well

Thermoelectric effects in two-dimensional topological insulators

Hybridization Gap and Edge States in Strained-Layer InAs/In0.5Ga0.5Sb Quantum Spin Hall Insulator

Odnoelektronnyy spektr korotkoperiodnoy InAs/GaSb sverkhreshetki s interfeysnoy kompensatsiey napryazheniy

Coexistence of topological and normal insulating phases in electro-optically tuned InAs/GaSb bilayer quantum wells

Multiprobe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence

One-Electron Spectrum of a Short-Period InAs/GaSb Superlattice with Interface Compensation of Strains

Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells

Quantum Spin Hall Effect in Two-Monolayer-Thick InN/InGaN Coupled Multiple Quantum Wells

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