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Interlayer stacking controls the electronic properties of the van der Waals material $1 T - {TaS}_{2}$

Nelson Hua ^1,2,*, Francesco Petocchi ^3,4, Henry G. Bell ^1,5, Gabriel Aeppli^1,5,6, Philipp Werner ^4,†, and Simon Gerber ^1,‡

¹PSI Center for Photon Science, Paul Scherrer Institute, 5232 Villigen PSI, Switzerland
²Institute for Quantum Electronics, ETH Zurich, 8093 Zurich, Switzerland
³Department of Quantum Matter Physics, University of Geneva, 1211 Geneva, Switzerland
⁴Department of Physics, University of Fribourg, 1700 Fribourg, Switzerland
⁵Laboratory for Solid State Physics and Quantum Center, ETH Zurich, 8093 Zurich, Switzerland
⁶Institute of Physics, EPF Lausanne, 1015 Lausanne, Switzerland

^*Contact author: nelson.hua@psi.ch
^†Contact author: philipp.werner@unifr.ch
^‡Contact author: simon.gerber@psi.ch

Ultrafast electronic structure engineering in 1T−TaS2 : Role of doping and amplitude mode dynamics

J. Jayabalan, Jiyu Chen, Laura Pätzold, Francesco Petocchi, Florian K. Diekmann, Negar Najafianpour, Ping Zhou, Walter Schnelle, Gesa-R. Siemann, Philip Hofmann, Kai Rossnagel, Tim Wehling, Martin Eckstein, Philipp Werner, and Uwe Bovensiepen

Phys. Rev. B 113 245107 (2026)

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Interlayer stacking controls the electronic properties of the van der Waals material $1 T - {TaS}_{2}$

Ultrafast electronic structure engineering in 1T−TaS2 : Role of doping and amplitude mode dynamics

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Articles Citing

Interlayer stacking controls the electronic properties of the van der Waals material 1T−TaS2

Ultrafast electronic structure engineering in 1T−TaS2 : Role of doping and amplitude mode dynamics

Interlayer stacking controls the electronic properties of the van der Waals material $1 T - {TaS}_{2}$