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Current-induced spin and orbital polarization in the ferroelectric Rashba semiconductor GeTe

Sergio Leiva-Montecinos1,*, Libor Vojáček2, Jing Li3, Mairbek Chshiev2,4, Laurent Vila2, Ingrid Mertig1,5, and Annika Johansson5,6

  • *Contact author: sergio-tomas.leiva-montecinos@physik.uni-halle.de
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Phys. Rev. Research 7, 043329 – Published 24 December, 2025Erratum Phys. Rev. Research 8, 039004 (2026)

DOI: https://doi.org/10.1103/py8f-zk2d

Abstract

The Edelstein effect is a promising mechanism for generating spin and orbital polarization from charge currents in systems without inversion symmetry. In ferroelectric materials, such as germanium telluride (GeTe), the combination of bulk Rashba splitting and voltage-controlled ferroelectric polarization provides a pathway for electrical control of the sign of the charge-spin conversion. In this work, we investigate current-induced spin and orbital magnetization in bulk GeTe using Wannier-based tight-binding models derived from ab initio calculations and semiclassical Boltzmann theory. Employing the modern theory of orbital magnetization, we demonstrate that the orbital Edelstein effect entirely dominates its spin counterpart. This difference is visualized through the spin and orbital textures at the Fermi surfaces, where the orbital moment surpasses the spin moment by one order of magnitude. Moreover, the orbital Edelstein effect remains largely unaffected in the absence of spin-orbit coupling, highlighting its distinct physical origin compared to the spin Edelstein effect.

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Erratum

Erratum: Current-induced spin and orbital polarization in the ferroelectric Rashba semiconductor GeTe [Phys. Rev. Research 7, 043329 (2025)]

Sergio Leiva-Montecinos, Libor Vojáček, Jing Li, Mairbek Chshiev, Laurent Vila, Ingrid Mertig, and Annika Johansson
Phys. Rev. Research 8, 039004 (2026)

Article Text

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Phys. Rev. Research 7, 043329– Published 24 December, 2025
  • Received 29 May 2025
  • Accepted 23 November 2025
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