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Erratum: Current-induced spin and orbital polarization in the ferroelectric Rashba semiconductor GeTe [Phys. Rev. Research 7, 043329 (2025)]

Sergio Leiva-Montecinos, Libor Vojáček, Jing Li, Mairbek Chshiev, Laurent Vila, Ingrid Mertig, and Annika Johansson

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Phys. Rev. Research 8, 039004 – Published 10 September, 2026

DOI: https://doi.org/10.1103/6lwq-233j

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Original Article

Current-induced spin and orbital polarization in the ferroelectric Rashba semiconductor GeTe

Sergio Leiva-Montecinos, Libor Vojáček, Jing Li, Mairbek Chshiev, Laurent Vila, Ingrid Mertig, and Annika Johansson
Phys. Rev. Research 7, 043329 (2025)

References (2)

  1. L. Ponet and S. Artyukhin, First-principles theory of giant Rashba-like spin splitting in bulk GeTe, Phys. Rev. B 98, 174102 (2018).
  2. D. G. Ovalle and A. Manchon, Spin and orbital-to-charge conversion in noncentrosymmetric materials: Hall versus Rashba-Edelstein effects, Phys. Rev. B 113, 174427 (2026).

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Phys. Rev. Research 8, 039004– Published 10 September, 2026
  • Received 12 June 2026
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Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

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