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Stabilization of hBN/SiC heterostructures with vacancies and transition-metal atoms

Arsalan Hashemi1,2,3,*, Nima Ghafari Cherati4,5, Sadegh Ghaderzadeh6, Yanzhou Wang7, Mahdi Ghorbani-Asl8, and Tapio Ala-Nissila7,9,†

  • 1Department of Applied Physics, MSP Group, Quantum Technology Finland Center of Excellence, Aalto University, P.O. Box 15600, FI-00076 Espoo, Finland
  • 2European Laboratory for Learning and Intelligent Systems (ELLIS) Institute Finland, Maarintie 8, 02150 Espoo, Finland
  • 3Department of Technical Physics, University of Eastern Finland, P.O. Box 1627, FI-70211 Kuopio, Finland
  • 4HUN-REN Wigner Research Centre for Physics, PO Box 49, H-1525 Budapest, Hungary
  • 5Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rkp. 3, H-1111 Budapest, Hungary
  • 6School of Chemistry, University of Nottingham, Nottingham NG7 2RD, United Kingdom
  • 7Department of Applied Physics, MSP Group, Quantum Technology Finland Center of Excellence, Aalto University, FI-00076 Espoo, Finland
  • 8Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
  • 9Department of Mathematical Sciences and Interdisciplinary Centre for Mathematical Modelling, Loughborough University, Loughborough, Leicestershire LE11 3TU, United Kingdom

  • *Contact author: arsalan.hashemi@aalto.fi
  • †Contact author: tapio.ala-nissila@aalto.fi

Improved sp2-BN epitaxial growth on 4H-SiC substrate by SiH4 pretreatment

Qichao Yang, Yiwei Duo, Jingnan Dong, Ziqiang Huo, Jiankun Yang, Junxue Ran, Junxi Wang, Tongbo Wei, and Junjie Qi

Eur. Phys. J. Spec. Top. 235 4223 (2026)

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