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GaN/SiO2 interface that does not create states within the band gap: A theoretical prediction

Kengo Nishio*, Takehide Miyazaki, and Mitsuaki Shimizu

  • National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan

  • *k-nishio@aist.go.jp

Theoretical study of the influence of GaOx interfacial layer on the GaN/SiO2 interface property

Shuto Hattori, Atsushi Oshiyama, and Kenji Shiraishi

Journal of Applied Physics 135 175303 (2024)

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