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    Spin-orbit-coupled transport and spin-current generation in InBi thin film heterostructures

    Gen Li1, Guohao Bo1, Yingjie Wang1, Sikai Tao1, Yong Wu1, Lei Shen2, Kangkang Meng1,*, Xiaoguang Xu1,†, and Yong Jiang1,3

    • 1Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
    • 2Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
    • 3Institute of Quantum Materials and Devices, School of Electronic and Information Engineering, State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, Tianjin 300387, China

    • *Contact author: kkmeng@ustb.edu.cn
    • †Contact author: xgxu@ustb.edu.cn

    Phys. Rev. Materials 10, 114402 – Published 2 November, 2026

    DOI: https://doi.org/10.1103/ypq2-bjp8

    Abstract

    Identifying spin-current source materials with a favorable balance among charge to spin conversion, spin transport, electrical conductivity, and interfacial transmission is important for spintronic applications. Here, we investigate spin-current generation in Co/InBi/Al2O3 heterostructures using anomalous Hall scaling and thickness-dependent spin Hall magnetoresistance (SMR) measurements. Structural characterizations confirm the formation of highly crystalline and nearly stoichiometric InBi thin films. Hall-scaling analysis indicates that the insertion of InBi substantially modifies spin-orbit-coupled transverse transport through enhanced spin-dependent scattering. More importantly, thickness-dependent SMR measurements reveal efficient spin-current generation in InBi, from which a spin Hall angle of 0.062–0.074 and a spin diffusion length of 5.39–5.80 nm is extracted over 50–300 K. These results demonstrate spin-current generation and spin transport in InBi-based heterostructures and provide insight into spin-orbit-coupled transport in p-orbital-dominated intermetallic thin films.

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