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EuIn2Sb2: Epitaxially stabilized axion insulator candidate with strong spin-orbit coupling

Hsiang Lee1, Shinichi Nishihaya1, Markus Kriener2, Ayano Nakamura1, Tadashi Yoneda1, Yuki Deguchi1, Makuro Goto1, and Masaki Uchida1,3,*

  • *Contact author: m.uchida@phys.sci.isct.ac.jp

Phys. Rev. Materials 10, L091201 – Published 28 September, 2026

DOI: https://doi.org/10.1103/s6rf-7tr5

Abstract

Eu triangular lattice layer compounds described by the general formula EuA2X2 have attracted growing attention due to a wide range of layered crystal structures and corresponding magnetic topological phases, arising from the coexistence of large Eu magnetic moments and energetically inverted A and X bands. Among the EuA2X2 family, EuIn2Sb2 has been predicted to host a robust axion insulator and higher-order topological insulator states by stronger spin-orbit coupling but still needs to be experimentally realized, including the structural identification. Here, we report the epitaxial stabilization of EuIn2Sb2 by adopting the molecular beam epitaxy technique. Structural characterization reveals that EuIn2Sb2 films are based on a unique In-on-In stacking, forming a different trilayer structure distinct from previously predicted structures in the EuA2X2 family. In addition to the in-plane antiferromagnetic ordering at TN=10.5K, the stronger spin-orbit coupling and enhanced In-In hybridization in EuIn2Sb2 make it an ideal candidate of axion insulator and higher-order topological insulator phases. These results establish EuIn2Sb2 as a member of the EuA2X2 family and offer an advanced platform for exploring these magnetic topological phases.

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