Transverse thermoelectric generation based on the anomalous Nernst effect (ANE) in topological magnets attracted attention because of the potential applications in novel thermoelectric devices. However, realizing engineering applications requires elucidating the enhancement mechanism of the ANE and establishing material design guidelines. Here, we demonstrate via first-principles calculations that strains engineering, a promising approach that tunes electronic structures and enhances material functionality through strain loading, maximizes the ANE in the magnetic Weyl semimetal ${\mathrm{Co}}_3{\mathrm{Sn}}_2{\mathrm{S}}_2$. Tensile strain enhances the anomalous Nernst conductivity by approximately threefold relative to the unstrained state. We find that strain-tunable nodal lines reduce their energy dispersion and induce large Berry curvature, providing the key mechanism for enhancing the anomalous Nernst conductivity. A detailed analysis of band structure and its chemical bonding clarifies the relationship between the applied strain, strain-tunable nodal lines, and enhancement of the anomalous Nernst conductivity. These results directly connect theoretical predictions of the ANE enhancement to strain as an engineering parameter, providing material design guidelines for superior thermoelectric devices.

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• Anomalous Hall effect
• Topological materials
• First-principles calculations