Origin of negative Kerr nonlinearity of monolayer bismuthene: Dominance of two-level interband transitions
Phys. Rev. Materials 10, 095201 – Published 1 September, 2026
DOI: https://doi.org/10.1103/18fp-jd94
Abstract
Nonlinear optical phenomena induced by ultra-fast lasers in two-dimensional (2D) materials have recently attracted significant research interest. Herein, we investigate monolayer bismuthene using first-principles simulation based on the real-time Time-Dependent Density Functional Theory (rt-TDDFT). The results indicate that it exhibits a pronounced optical Kerr effect, with a negative nonlinear refractive index (NNRI) , whose absolute value is comparable to that of typical two-dimensional materials. By analyzing the electron transition probabilities among the conduction band minimum (CBM), valence band maximum (VBM), and , combined with perturbation theory for multi-level problems, we attribute the NNRI to the competition between two-level and three-level processes. This study clarifies the microscopic origin of NNRI in monolayer bismuthene, laying a theoretical foundation for unraveling the nonlinear optical regulation law of elemental two-dimensional bismuth-based nanomaterials.