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    Origin of negative Kerr nonlinearity of monolayer bismuthene: Dominance of two-level interband transitions

    Bo Zhang1,*, Yujun Yang2, and Hui Wang1,†

    • 1Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
    • 2Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China

    • *Contact author: zb@fysik.cn
    • †Contact author: wh@fysik.cn

    Phys. Rev. Materials 10, 095201 – Published 1 September, 2026

    DOI: https://doi.org/10.1103/18fp-jd94

    Abstract

    Nonlinear optical phenomena induced by ultra-fast lasers in two-dimensional (2D) materials have recently attracted significant research interest. Herein, we investigate monolayer bismuthene using first-principles simulation based on the real-time Time-Dependent Density Functional Theory (rt-TDDFT). The results indicate that it exhibits a pronounced optical Kerr effect, with a negative nonlinear refractive index (NNRI) n2=−1.194×10−9cm2/W, whose absolute value is comparable to that of typical two-dimensional materials. By analyzing the electron transition probabilities among the conduction band minimum (CBM), valence band maximum (VBM), and VBM+1, combined with perturbation theory for multi-level problems, we attribute the NNRI to the competition between two-level and three-level processes. This study clarifies the microscopic origin of NNRI in monolayer bismuthene, laying a theoretical foundation for unraveling the nonlinear optical regulation law of elemental two-dimensional bismuth-based nanomaterials.

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