Epitaxial strain effect on the eff = 1/2 moment orientation in SrIrO thin films
Ludi Miao, Hong Xu, and Z. Q. Mao
Phys. Rev. B 89, 035109 (2014) - Published 8 January, 2014
We have grown SrIrO (SIO) epitaxial thin films on SrTiO (STO) and NdGaO (NGO) substrates by a pulsed laser deposition method and characterized their structures and magnetic properties. We find that SIO films grown on STO substrates display tetragonal structure with a tensile strain of 0.13%, while SIO films grown on NGO substrates exhibit slightly orthorhombic structure with anisotropic biaxial tensile strains of 0.39% and 0.51% along the in-plane crystallographic axes. Although both films display insulating properties as bulk SIO does, their magnetic properties are distinct from that of bulk SIO. The ferromagnetic (FM) component of the = 1/2 canted antiferromagnetic order, which emerges below ∼240 K in bulk SIO, is significantly weakened in both films, with a greater weakening appearing in the SIO/NGO film. From structural and magnetoresistance anisotropy analyses for both films, we reveal that the weak FM component in SIO films is dependent on the epitaxial strain. The greater tensile strain leads to a smaller octahedral rotation: The rotation angle is ∼9.7(1)° for the SIO/NGO film and ∼10.7(2)° for the SIO/STO film. These findings indicate that the = 1/2 moment orientation in SIO follows the IrO octahedral rotation due to strong spin-orbit interaction.