We present a theoretical study of the influence of relativistic effects on the electronic band structure and thermopower of Mg ( Si, Ge, Sn) semiconductors. The full potential Korringa-Kohn-Rostoker (KKR) method is used, and a detailed comparison between the fully relativistic and semirelativistic electronic structure features is done. We show that the spin-orbit (S-O) interaction splits the valence band at point in good agreement with the experimental data, and this effect strongly depends on atom. The S-O modifications of the topology of the -centered holelike Fermi surface pockets lead to a change in electron transport properties, which are investigated using the Boltzmann approach. In addition, a simple and efficient method is presented for the calculation of density of states effective mass , and then used to examine the impact of relativistic effects on . It is found that the S-O coupling of the valence bands reduces the effective mass and therefore significantly lowers the thermopower, primarily in , but also in . A detrimental influence of the S-O interaction on the thermoelectric performance of -type Mg is analyzed as a function of temperature ( K) and carrier concentration ( cm). Interestingly, similar calculations in -type MgX, show a negligible effect of the S-O interaction on the lowest conduction bands and, consequently, also on the Seebeck coefficient.