Exciton polaritons are coupled states of matter and light, originated by the strong interaction between an optical mode and semiconductor excitons. This interaction can be obtained also at a single-particle level, in which case it has been shown that a quantum treatment is mandatory. In this work we study the light-matter entanglement of polaritons from a fully quantum formalism including pumping and dissipation. We find that the entanglement is completely destroyed if the exciton and photon are tuned at the resonance condition, even under very low pumping rates. Instead, the best condition for maximizing entanglement and purity of the steady state is when the exciton and photon are out of resonance and when incoherent pumping exactly compensates the dissipation rate. In the presence of multiple quantum dots coupled to the light mode, matter-light entanglement survives only at larger detuning for a higher number of quantum dots considered.

Starting from the three-dimensional Dirac semimetal in ${\mathrm{Na}}_3\mathrm{Bi}$, we found a topological insulator (TI) in the known compound of NaBaBi by extra pressure. The TI of NaBaBi can be viewed as the distorted version of ${\mathrm{Na}}_3\mathrm{Bi}$ with breaking inversion symmetry. When the exchange-correlation energy is considered in generalized gradient approximation (GGA), the TI phase has a band inversion between the Bi-$p$ and Na-$s$ orbitals. Since GGA often overestimates the band inversion, we also performed more accurate calculations by using hybrid functional theory (HSE). From HSE calculations we found that NaBaBi exhibits as a trivial insulator at zero pressure, and the other TI phase with $p\text{−}d$ inversion can be achieved by pressure. Though both of two TI phases have Dirac-cone-type surface states, they have opposite spin textures. In the upper cone, a lefthanded spin texture exists for the $s\text{−}p$ inverted phase (similar to a common TI, e.g., ${\mathrm{Bi}}_2{\mathrm{Se}}_3$), whereas a righthanded spin texture appears for the $p\text{−}d$ inverted phase. This work presents a prototype model of a TI exhibits righthanded spin texture.

We have investigated spin reorientation phenomena and interaction-driven effects under the presence of applied strains on the (001) surface of ${\mathrm{Pb}}_{1-x}{\mathrm{Sn}}_x$(Te, Se) topological crystalline insulators, which host multiple Dirac cones. Our analysis is based on a four-band $k·p$ model, which captures the spin and orbital textures of the surface states at low energies around the $\overline{X}$ and $\overline{Y}$ points, including the Lifshitz transition. Even without breaking the time-reversal symmetry, we find that certain strains that break the mirror symmetry can induce a hedgehoglike spin texture associated with gap formation at the Dirac points. The Chern number of the gapped surface ground state is shown to be tunable through the interplay of strains and a perpendicular Zeeman field. We also consider the effects of strain in the presence of interactions in driving competing orders, and we obtain the associated phase diagram at the mean-field level. Potential applications of our results for low power consuming electronics are discussed.

In the nearest vicinity of the critical temperature, types I and II of conventional single-band superconductors interchange at the Ginzburg-Landau parameter $\kappa =1/\sqrt{2}$. At lower temperatures this point unfolds into a narrow but finite interval of $\kappa$'s, shaping an intertype (transitional) domain in the $(\kappa ,T)$ plane. In the present work, based on the extended Ginzburg-Landau formalism, we show that the same picture of the two standard types with the transitional domain in between applies also to multiband superconductors. However, the intertype domain notably widens in the presence of multiple bands and can become extremely large when the system has a significant disparity between the band parameters. It is concluded that many multiband superconductors, such as recently discovered borides and iron-based materials, can belong to the intertype regime.

The relation of self- and interdiffusion in a liquid metal, particularly the influence of cross correlations at low concentrations, is studied experimentally. Accurate interdiffusion data are obtained by a combination of x-ray radiography with the shear-cell method on the ground and on the sounding rocket MAPHEUS under microgravity conditions. Self-diffusion coefficients, measured by quasielastic neutron scattering, increase with decreasing Ni concentration, whereas interdiffusion coefficients are about constant. We show that cross correlations influence interdiffusion even at concentrations as low as 2 at. % Ni. Consequently, Darken's equation is not valid in this case.

Motivated by the importance of noncollinear and noncoplanar magnetic phases in determining various electrical properties in magnets, we investigate the magnetic phase diagram of the extended Hubbard model on an anisotropic triangular lattice. We map out the ground-state phase diagram within a mean-field scheme that treats collinear, noncollinear, and noncoplanar phases on equal footing. In addition to the standard ferromagnet and ${120}^{\circ }$ antiferromagnet states, we find the four-sublattice flux, the 3Q noncoplanar, and the noncollinear charge-ordered states to be stable at specific values of filling fraction $n$. Inclusion of a nearest-neighbor Coulomb repulsion leads to intriguing spin-charge-ordered phases. The most notable of these are the collinear and noncollinear magnetic states at $n=2/3$, which occur together with a pinball-liquid-like charge order. Our results demonstrate that the elementary single-orbital extended Hubbard model on a triangular lattice hosts unconventional spin-charge ordered phases, which are similar to those reported in more complex and material-specific electronic Hamiltonians.

Optical near fields (ONFs) have Fourier components with large wave numbers that are two or three orders of magnitude larger than those of far-field propagating light owing to their nonuniformity in space. By utilizing these large wave numbers, the ONF is expected to induce an indirect interband transition between Bloch states having different wave numbers and directly generate an electron-hole pair without electron-phonon coupling. We perform time-dependent dynamics calculations of a one-dimensional periodic potential with an indirect band-gap structure and demonstrate that the ONF definitely induces an indirect interband transition. Instead of using the general Bloch boundary condition, which is usually imposed in conventional band structure calculations, we adopt an alternative boundary condition, the Born–von Kármán boundary condition, to appropriately treat indirect interband transitions. The calculated absorption spectra for the far-field and ONF excitations show different absorption edges and spectral patterns. We argue that this difference can be experimentally measured as evidence of the effects of the large wave numbers of the ONF.

The anomalous Hall effect (AHE) in strongly disordered magnetic systems has been buried in persistent confusion despite its long history. We report the AHE in perpendicularly magnetized $L{1}_0\text{−}\mathrm{MnAl}$ epitaxial films with a variable orbital two-channel Kondo (2CK) effect arising from the strong coupling of conduction electrons and the structural disorders of two-level systems. The AHE is observed to excellently scale with ${\rho }_{\mathrm{AH}}/f=a_0{\rho }_{xx0}+b{\rho }_{xx}^2$ at high temperatures where phonon scattering prevails. In contrast, significant deviation occurs at low temperatures where the orbital 2CK effect becomes important, suggesting a negative AHE contribution. The deviation of the scaling agrees with the orbital 2CK effect in the breakdown temperatures and deviation magnitudes.

A charged entanglement entropy is a new measure which probes quantum entanglement between different charge sectors. We study symmetry-protected topological (SPT) phases in (2+1)-dimensional space-time by using this charged entanglement entropy. SPT phases are short-range entangled states without topological order and hence cannot be detected by the topological entanglement entropy. We demonstrate that the universal part of the charged entanglement entropy is nonzero for nontrivial SPT phases and therefore it is a useful measure to detect short-range entangled topological phases. We also discuss that the classification of SPT phases based on the charged topological entanglement entropy is related to that of the braiding statistics of quasiparticles.

We present a method to calculate the excitonic spectra of all direct semiconductors with a complex valence band structure. The Schrödinger equation is solved using a complete basis set with Coulomb-Sturmian functions. This method also allows for the computation of oscillator strengths. Here we apply this method to investigate the impact of the valence band structure of cuprous oxide $\left({\mathrm{Cu}}_2\mathrm{O}\right)$ on the yellow exciton spectrum. Results differ from those of J. Thewes et al. [Phys. Rev. Lett. 115, 027402 (2015)]; the differences are discussed and explained. The difference between the second and third Luttinger parameter can be determined by comparisons with experiments; however, the evaluation of all three Luttinger parameters is not uniquely possible. Our results are consistent with band structure calculations. Considering also a finite momentum $\hslash K$ of the center of mass, we show that the large $K$-dependent line splitting observed for the $1S$ exciton state by G. Dasbach et al. [Phys. Rev. Lett. 91, 107401 (2003)] is not related to an exchange interaction but rather to the complex valence band structure of ${\mathrm{Cu}}_2\mathrm{O}$.

Rare-earth induced layered structures on the Si(111) surface are investigated by a combined approach consisting of ab initio thermodynamics, electron and x-ray diffraction experiments, angle-resolved photoelectron spectroscopy, and scanning tunneling microscopy. Our density functional theory calculations predict the occurrence of structures with different periodicity, depending on the rare-earth availability. Microscopic structural models are assigned to the different silicide phases on the basis of stability criteria. The thermodynamically stable theoretical models are then employed to interpret the experimental results. The agreement between the simulated and measured scanning tunneling microscopy images validates the proposed structural models. The electronic properties of the surfaces are discussed on the basis of the calculated electronic band structure and photoelectron spectroscopy data.

Hybrid quantum Hall (QH) junctions have been extensively studied by transport measurements due to their exciting physics and device applications. Here we report on spatially resolving electronic properties of such a junction on the nanoscale. We present a subnanometer-resolved scanning tunneling microscopy (STM) and scanning tunneling spectroscopy study of a monolayer-bilayer graphene planar junction in the QH regime. The atomically well-defined interface of such a junction allows us to spatially resolve the interface electronic properties. Around the interface, we detect Landau quantization of massless Dirac fermions as expected in the graphene monolayer for filled states of the junction, whereas unexpectedly, only Landau quantization of massive Dirac fermions as expected in the graphene bilayer is observed for empty states. The observed unconventional interface Landau quantization arises from the fact that the quantum conductance across the interface is solely determined by the minimum filling factors (number of edge modes) in the graphene monolayer and bilayer regions of the junction. Our finding opens the way to spatially explore the QH effect of different graphene hybrid structures only using a STM.

Quantum kinetic equations of motion for carrier and impurity spins in paramagnetic II-VI diluted magnetic semiconductors in a $\mathbf{k}$-dependent effective magnetic field are derived, where the carrier-impurity correlations are taken into account. In the Markov limit, rates for the electron-impurity spin transfer can be derived for electron spins parallel and perpendicular to the impurity spins corresponding to measurable decay rates in Kerr experiments in Faraday and Voigt geometry. Our rigorous microscopic quantum kinetic treatment automatically accounts for the fact that, in an individual spin flip-flop scattering process, a spin flip of an electron is necessarily accompanied by a flop of an impurity spin in the opposite direction and the corresponding change of the impurity Zeeman energy influences the final energy of the electron after the scattering event. This shift in the electron energies after a spin flip-flop scattering process, which usually has been overlooked in the literature, turns out to be especially important in the case of extremely diluted magnetic semiconductors in an external magnetic field. As a specific example for a $\mathbf{k}$-dependent effective magnetic field the effects of a Rashba field on the dynamics of the carrier-impurity correlations in a ${\mathrm{Hg}}_{1-x-y}{\mathrm{Cd}}_y{\mathrm{Mn}}_x\mathrm{Te}$ quantum well are described. It is found that, although accounting for the Rashba interaction in the dynamics of the correlations leads to a modified $\mathbf{k}$-space dynamics, the time evolution of the total carrier spin is not significantly influenced. Furthermore, a connection between the present theory and the description of collective carrier-impurity precession modes is presented.

We consider the problem of transport through a multiterminal molecular junction in the presence of a stochastic bias, which can also be used to describe transport through fluctuating molecular energy levels. To describe these effects, we first make a simple extension of our previous work [Phys. Rev. B 91, 125433 (2015)] to show that the problem of tunneling through noisy energy levels can be mapped onto the problem of a noisy driving bias, which appears in the Kadanoff-Baym equations for this system in an analogous manner to the driving term in the Langevin equation for a classical circuit. This formalism uses the nonequilibrium Green's function method to obtain analytically closed formulas for transport quantities within the wide-band limit approximation for an arbitrary time-dependent bias and it is automatically partition free. We obtain exact closed formulas for both the colored and white noise-averaged current at all times. In the long-time limit, these formulas possess a Landauer-Büttiker–type structure which enables the extraction of an effective transmission coefficient for the transport. Expanding the Fermi function into a series of simple poles, we find an exact formal relation between the parameters which characterize the bias fluctuations and the poles of the Fermi function. This enables us to describe the effect of the temperature and the strength of the fluctuations on the averaged current which we interpret as a quantum analog to the classical fluctuation-dissipation theorem. We use these results to convincingly refute some recent results on the multistability of the current through a fluctuating level, simultaneously verifying that our formalism satisfies some well-known theorems on the asymptotic current. Finally, we present numerical results for the current through a molecular chain which demonstrate a transition from nonlinear to linear $I\text{−}V$ characteristics as the strength of fluctuations is increased, as well as a stochastic resonance effect in the conductance of this system.

In this paper we investigate the resonant intersubband Raman scattering of two-dimensional electron systems in GaAs-AlGaAs single quantum wells. Self-consistent calculations of the polarized and depolarized Raman cross sections show that the appearance of excitations at the unrenormalized single-particle energy are related to three factors: the extreme resonance regime, the existence of degeneracy in intersubband excitations of the electron gas, and, finally, degeneracy in the interactions between pairs of excitations. It is demonstrated that the physics that governs the problem is similar to the one that gives rise to the formation of the superconducting state in the BCS theory of normal metals. Comparison between experiment and theory shows an excellent agreement.

We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN quantum disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over three orders of magnitude, strong nonlinearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (size, position along the NW and shell thickness). For thick QDisks (>4 nm), the QDisk emission energy is observed to blueshift with the increase of the emission intensity. This is interpreted as a consequence of the increase of carriers density excited by the incident electron beam inside the QDisks, which screens the internal electric field and thus reduces the quantum confined Stark effect (QCSE) present in these QDisks. For thinner QDisks $\left(<3\mathrm{nm}\right)$, the blueshift is almost absent in agreement with the negligible QCSE at such sizes. For QDisks of intermediate sizes there exists a current threshold above which the energy shifts, marking the transition from unscreened to partially screened QCSE. From the threshold value we estimate the lifetime in the unscreened regime. These observations suggest that, counterintuitively, electrons of high energy can behave ultimately as single electron-hole pair generators. In addition, when we increase the current from 1 to 10 pA the light emission efficiency drops by more than one order of magnitude. This reduction of the emission efficiency is a manifestation of the “efficiency droop” as observed in nitride-based 2D light emitting diodes, a phenomenon tentatively attributed to the Auger effect.

This paper presents an efficient direct quantum method to model inelastic scattering in nanoelectronic structures including degenerate band extrema. It couples the Born series expansion of the nonequilibrium Green's function (NEGF) to an analytic continuation based on the Padé approximant technique. Using a two-band $\mathrm{k}·\mathrm{p}$ Hamiltonian, we analyze the electron transport through a linear chain in the presence of both optical and acoustic phonons. Results are consistently compared with the usual, computationally expensive, self-consistent Born approximation (SCBA). We find that our approach provides a much better convergence for both types of phonons in the presence of strong multiband coupling. The calculation of the current to the fifth order in the interactions is sufficient to reproduce the influence of all considered phonon interactions. We also show that the method can be applied to the calculation of the density of carriers which depicts however a slower convergence rate than the current. The capability to efficiently calculate both current and carrier density represents a clear advantage in a context of increasing request for atomistic quantum simulations.

We aim to understand how the van der Waals force between neutral adatoms and a graphene layer is modified by uniaxial strain and electron correlation effects. A detailed analysis is presented for three atoms (He, H, and Na) and graphene strain ranging from weak to moderately strong. We show that the van der Waals potential can be significantly enhanced by strain, and present applications of our results to the problem of elastic scattering of atoms from graphene. In particular, we find that quantum reflection can be significantly suppressed by strain, meaning that dissipative inelastic effects near the surface become of increased importance. Furthermore, we introduce a method to independently estimate the Lennard-Jones parameters used in an effective model of He interacting with graphene, and determine how they depend on strain. At short distances, we find that strain tends to reduce the interaction strength by pushing the location of the adsorption potential minima to higher distances above the deformed graphene sheet. This opens up the exciting possibility of mechanically engineering an adsorption potential, with implications for the formation and observation of anisotropic low-dimensional superfluid phases.

Extinction and photoluminescence spectra are experimentally and theoretically studied for a periodic array of gold nanowires deposited on top of a dielectric substrate containing silicon nanocrystals. Quasiguided modes are observed in the substrate resulting in modification of optical properties of silicon nanocrystals. Our calculations of extinction and photoluminescence spectra are in good agreement with experimental results. The periodicity provides a powerful tool for achieving a high photoluminescence outcoupling efficiency of silicon nanocrystals.

We have studied by muon spin resonance $\left(\mu \mathrm{SR}\right)$ the helical ground state and fluctuating chiral phase recently observed in the MnGe chiral magnet. At low temperature, the muon polarization shows double-period oscillations at short-time scales. Their analysis, akin to that recently developed for MnSi [A. Amato et al., Phys. Rev. B 89, 184425 (2014)], provides an estimation of the field distribution induced by the Mn helical order at the muon site. The refined muon position agrees nicely with ab initio calculations. With increasing temperature, an inhomogeneous fluctuating chiral phase sets in, characterized by two well-separated frequency ranges which coexist in the sample. Rapid and slow fluctuations, respectively, associated with short-range and long-range ordered helices, coexist in a large temperature range below $T_{\mathrm{N}}=170$ K. We discuss the results with respect to MnSi, taking the short helical period, metastable quenched state, and peculiar band structure of MnGe into account.