Electrical (longitudinal) resistivity , at and kOe, anomalous Hall resistivity , and magnetization , have been measured at different temperatures in the range 5–300 K on the (CFS) Heusler-alloy thin films, grown on Si(111) substrate, with thickness ranging from 12 to 100 nm. At fixed fields and kOe, goes through a minimum at (which depends on the film thickness) in all the CFS thin films. In sharp contrast, both the anomalous Hall coefficient and monotonously increase with temperature without exhibiting a minimum. Elaborate analyses of , , and establishes the following. (i) The enhanced electron-electron Coulomb interaction (EEI) quantum correction (QC) is solely responsible for the upturn in “zero-field” and “in-field” at whereas the interband spin-flip electron-magnon () and intraband non-spin-flip electron-phonon () inelastic-scattering processes, present even at , overwhelm the EEI QC at temperatures above and thereby cause to increase with temperature. At all temperatures, scattering contribution dominates over the scattering contribution. (ii) Compared to the intrinsic () Berry-phase curvature mechanism, skew scattering (Sk) and side-jump (Sj) both make sizable contributions to or but, at any temperature in the range 5–300 K, the contribution of Sj is considerably larger than that of Sk. The observations (i) and (ii) provide a conclusive experimental evidence for the theoretical prediction that the EEI quantum corrections to anomalous Hall resistivity/coefficient vanish for both skew scattering and side-jump mechanisms even though the EEI corrections to longitudinal resistivity are finite. A strong suppression (by an order of magnitude) is observed in the anomalous Hall conductivity from the resonantly enhanced intrinsic value of S/cm when the Fermi level is located near the anticrossing of band dispersions split by spin-orbit interaction. This suppression is shown to correspond to one or both of the possibilities: the resonance condition is not satisfied, or the interband spin-flip inelastic electron-magnon scattering enhances the side-jump contribution at the expense of the intrinsic contribution. We demonstrate that , or equivalently , scales with , the temperature-dependent part of , over a considerably wide temperature range (5–300 K) only when is corrected for the observed temperature dependence of spontaneous magnetization and for the EEI effects.