Peculiar electronic states, symmetries, and Berry phases in irradiated materials
Andrii Iurov, Godfrey Gumbs, and Danhong Huang
Phys. Rev. B 99, 205135 (2019) - Published 20 May, 2019
We have laid out the results of a rigorous theoretical investigation into the response of electron dressed states, i.e., interacting Floquet states arising from the off-resonant coupling of Dirac pseudospin-1 electrons in lattices, to external radiation with various polarizations. Specifically, we have examined the role played by the hopping-scale parameter that is a measure of the coupling strength with an additional atom at the center of the honeycomb graphene lattice and which, when varied, continuously gives rise to different Berry phases. We have found that the electronic properties of the model (consisting of a flat band and two cones) could be significantly modified depending on the polarization of the imposed irradiation. We have demonstrated that under elliptically polarized light the low-energy band structure of such lattices will directly depend on the valley index. We have obtained and analyzed the wave functions, their symmetries, and the corresponding Berry phases, connections, and curvatures, and revealed that such field-modified geometry phases could be finite even for a dice lattice, which has not been observed in the absence of an optical dressing field. These results lead to possible radiation-induced band structure control and engineering, as well as experimental and technological realization of such optoelectronic and integrated photonic devices.