Relaxation dynamics of spin- silicon vacancies in -SiC
A. J. Ramsay and A. Rossi
Phys. Rev. B 101, 165307 (2020) - Published 17 April, 2020
Room-temperature optically detected magnetic resonance experiments on spin- silicon vacancies in -SiC are reported. The transition is accessed using a two-microwave-frequency excitation protocol. The ratio of the Rabi frequencies of the and transitions is measured to be . The deviation from is attributed to small difference in factor for different magnetic dipole transitions. Whereas a spin- system is characterized by a single-spin lifetime , we experimentally demonstrate that the spin- system has three distinct relaxation modes that can be preferentially excited and detected. The measured relaxation times are . This differs from the values of expected for pure dipole (), quadrupole (), and octupole () relaxation modes, respectively, and implies admixing of the slow dipole and fast octupole relaxation modes.
